Panasonic 2SB1320A Datasheet

Transistors

2SB1320A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD1991A

■ Features

• High forward current transfer ratio h

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio
Collector to emitter saturation voltage V
Transition frequency f
Collector output capacitance C

Note)*: Rank classification

*

FE

CBO

CEO

EBO

CP

C

C

j

−55 to +150 °C

stg

CBO

I

CEO

CBO

CEO

EBO

h

FE

CE(sat)IC

T

ob

−60 V

−50 V

−7V

−200 mA

−100 mA

400 mW
150 °C

VCB = −20 V, IE = 0 −1 µA
VCE = −20 V, IB = 0 −1 µA
IC = −10 µA, IE = 0 −60 V
IC = −2 mA, IB = 0 −50 V
IE = −10 µA, IC = 0 −7V
VCE = −10 V, IC = −2 mA 160 460

= −100 mA, IB = −10 mA −1V
VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF

6.9±0.1

0.7 4.0

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

123

Note) In addition to the

lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.

1.2±0.1

+

0.1

0.45

−

0.05

1.05
±0.05

1.0

0.85

+0.1

−0.05

0.45

1: Emitter
2: Collector
3: Base
MT1 Type Package

0.65
max.

2.5±0.1

2.5±0.1

Unit: mm

(1.45)

0.8

0.8

3.5±0.114.5±0.5

(HW Type)

Rank Q R S No-rank

h

FE

160 to 260 210 to 340 290 to 460 160 to 460

Product of no-rank is not classified and have no indication for rank.

1

2SB1320A Transistors

PC  T

500

)
mW

400

(

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

IB  V

−400

−350

−300

)

µA

(

−250

B

−200

−150

Base current I

−100

−50

0

0 − 0.4 − 0.8 −1.2 −1.6

Base to emitter voltage V

BE

a

VCE = −5 V
T

= 25°C

a

(V

BE

IC  V

−120

−100

CE

Ta = 25°C

)
mA

(

−80

C

−60

−40

Collector current I

−20

0

0 −12−2 −10−4 −8−6

)

Collector to emitter voltage VCE (V

IC  V

−240

−200

)
A

(m

−160

C

−120

−80

Ta = 75°C

IB = −300 µA

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

)

BE

VCE = −5 V

25°C

−25°C

Collector current I

−40

0

− 0.4 − 0.8

0 −2.0−1.6−1.2

)

Base to emitter voltage V

)

(V

BE

−60
VCE = −5 V
T

a

−50

)
mA

(

−40

C

−30

−20

Collector current I

−10

0

0 −100 −200 −300 −400

)

−10

V

(

−3

CE(sat)

−1

− 0.3

− 0.1

− 0.03

− 0.01

− 0.003

− 0.001

Collector to emitter saturation voltage V

−1 −3

IC  I

B

= 25°C

Base current IB (µA

V

 I

CE(sat)

Ta = 75°C

25°C

−25°C

−10 −30 −100 −300 −1 000

Collector current IC (mA

)

C

IC / IB = 10

)

hFE  I

600

500

FE

400

Ta = 75°C

300

25°C

−25°C

200

Forward current transfer ratio h

100

0

−1 −3

−10 −30 −100 −300 −1 000

Collector current IC (mA

2

C

VCE = −5 V

fT  I

E

)

MHz

(

T

160

140

120

100

80

60

40

VCB = −10 V

= 25°C

T

a

Transition frequency f

20

0

0.1 0.3 1 3 10 30 100

)

Emitter current IE (mA

)

8

)

7

pF

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

−1 −3 −10−2 −20−5 −50−30 −100

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector to base voltage VCB (V

)