Panasonic 2SB1317 Datasheet

Po wer Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD1975
Features
Satisfactory foward current transfer ratio hFE vs. collector cur­rent I
characteristics
C
Wide area of safe operation (ASO) High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
–180 –180
–5 –25 –15 150
3.5
150
–55 to +150
Unit
V V V A A
W
˚C ˚C
26.0±0.520.0±0.5
1.5
2.5
20.0±0.5
1.5
Solder Dip
10.9±0.5
123
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
Unit: mm
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base 2:Collector 3:Emitter
TOP–3L Package
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
*
h
Rank classification
FE2
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = –180V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –8A VCE = –5V, IC = –8A IC = –10A, IB = –1A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz
min
20 60 20
typ
20
450
max
–50 –50
200
–1.8 –2.5
Unit
µA µA
V V
MHz
pF
1
Po wer Transistors 2SB1317
PC—Ta IC—V
200
) W
(
C
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
)
–10
V
(
–3
CE(sat)
–1
– 0.3
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3.5W)
C
(1)
(3)
(2)
Ambient temperature Ta (˚C
V
CE(sat)—IC
TC=100˚C
25˚C
–25˚C
IC/IB=10
CE
–24
–20
) A
(
–16
C
–12
–8
IB=–1000mA
–800mA
Collector current I
–4
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
1000
FE
300
TC=100˚C
100
30
25˚C
–25˚C
–700mA
–600mA –500mA
C
TC=25˚C
–400mA –300mA –200mA –150mA
–100mA
–50mA
VCE=–5V
–24
)
–18
A
(
C
–12
Collector current I
)
1000
)
300
MHz
(
T
100
–6
0
0–4–1 –3–2
30
IC—V
BE
VCE=–5V
25˚C
TC=–25˚C 100˚C
Base to emitter voltage VBE (V
fT—I
C
VCE=–10V f=1MHz T
=25˚C
C
)
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
CB
)
IE=0 f=1MHz
=25˚C
T
C
Collector current IC (A
10000
) pF
(
3000
ob
1000
300
100
30
Cob—V
Collector output capacitance C
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
10
3
Forward current transfer ratio h
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
Area of safe operation (ASO)
–100
I
–30
CP
)
I
–10
C
A
(
Collector current I
)
C
– 0.3
– 0.1
– 0.03
– 0.01
100ms
–3
–1
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
)
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
10
3
Transition frequency f
1
– 0.01
)
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
2
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