Panasonic 2SB1297 Datasheet
Transistor
2SB1297
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1937
Features
■
●
Extremely satisfactory linearity of the forward current transfer
ratio h
●
High transition frequency fT.
●
Makes up a complementary pair with 2SD1937, which is optimum for the pre-driver stage of a 40 to 60W output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
■
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
.
FE
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–120
–120
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1.27
5.0±0.2
123
2.54±0.15
0.7±0.2
0.7±0.1
0.45
1.27
+0.15
–0.1
8.0±0.2
13.5±0.5
0.45
2.3±0.2
Unit: mm
4.0±0.2
+0.15
–0.1
1:Emitter
2:Collector
3:Base
TO–92NL Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
Conditions
IC = –0.1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
*2
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–120
–5
90
50
typ
max
220
–1.0
–1.2
250
30
*2
Pulse measurement
Unit
V
V
V
V
MHz
pF
1
Transistor
2SB1297
PC — Ta IC — V
1.6
)
1.4
W
(
C
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
C
Ta=–25˚C
25˚C
75˚C
– 0.3 –3
IC/IB=10
)
CE
–1.2
IB=–10mA
)
A
(
–1.0
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
V
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
— I
C
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
IC/IB=10
)
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.01
)
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
1 3 10 30 100
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT — I
E
VCB=–10V
Ta=25˚C
Emitter current IE (mA
)
)
Cob — V
40
)
pF
35
(
ob
30
25
20
15
10
5
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
–10
–30
I
)
CP
–10
A
(
I
C
C
– 0.3
– 0.1
– 0.03
– 0.01
Collector current I
– 0.003
– 0.001
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
t=1s
Single pulse
Ta=25˚C
t=10ms
)
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