Panasonic 2SB1221 Datasheet

Transistor

2SB1221

Silicon PNP epitaxial planer type

For general amplification
Complementary to 2SC3941

Features

■

●

Low collector to emitter saturation voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

.

CE(sat)

Ratings

–250
–200

–5

–100

–70

1

150

–55 ~ +150

Unit

V
V

V
mA
mA

W
˚C
˚C

Conditions

VCB = –12V, IE = 0
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

1.27

5.0±0.2

123

2.54±0.15

min

–200

–5
60

50

0.7±0.2

0.7±0.1

0.45

1.27

+0.15
–0.1

8.0±0.2

13.5±0.5

0.45

2.3±0.2

typ

80

5

Unit: mm

4.0±0.2

+0.15
–0.1

1:Emitter
2:Collector
3:Base
TO–92NL Package

max

Unit

–2

µA

220

–1.5

MHz

10

V
V

V

pF

*

hFE Rank classification

Rank Q R

h

FE

60 ~ 150 100 ~ 220

1

Transistor

2SB1221

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB — V

BE

–2.4

–2.0

)
mA

–1.6

(

B

–1.2

VCE=–10V
Ta=25˚C

CE

–120

–100

)
mA

(

–80

C

–60

–40

Collector current I

–20

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

IC — V

–120

)
mA

(

–100

–80

C

–60

25˚C

Ta=75˚C

IB=–2mA

–25˚C

BE

Ta=25˚C

–1.8mA
–1.6mA

–1.4mA

–1.2mA
–1.0mA

– 0.8mA

VCE=–10V

– 0.6mA
– 0.4mA

– 0.2mA

–120

–100

)
mA

(

–80

C

–60

–40

Collector current I

–20

)

)

–100

V

(

–30

CE(sat)

–10

0

0 –2.4–2.0–1.6– 0.4 –1.2– 0.8

–3

–1

IC — I

B

VCE=–10V
Ta=25˚C

Base current IB (mA

V

— I

CE(sat)

C

)

IC/IB=10

– 0.8

Base current I

– 0.4

0

0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4

Base to emitter voltage VBE (V

hFE — I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0
– 0.1 –1 –10 –100– 0.3 –3 –30

Ta=75˚C

VCE=–10V

25˚C

–25˚C

Collector current IC (mA

–40

Collector current I

–20

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

)

Base to emitter voltage VBE (V

fT — I

E

160

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

VCB=–10V
Ta=25˚C

)

)

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

16

)
pF

14

(

ob

12

10

8

6

4

2

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

25˚C

Cob — V

CB

Ta=75˚C

–25˚C

IE=0
f=1MHz
Ta=25˚C

)

)

2