Panasonic 2SB1220G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB1220G

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Complementary to 2SD1821G

■ Features

• High collector-emitter voltage (Base open) V

• Low noise voltage NV

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

CEO

■ Package

• Code
SMini3-F2

• Marking Symbol: I

• Pin Name

1. Base

2. Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−150 V

−150 V

−5V

−50 mA

−100 mA

150 mW

150 °C

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Noixe voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB 150 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

*

130 to 220 185 to 330 260 to 450

CEOIC

EBOIE

I

CBO

h

FE

CE(sat)IC

T

ob

= −100 µA, IB = 0 −150 V

= −10 µA, IC = 0 −5V

VCB = −100 V, IE = 0 −1 µA

VCE = −5 V, IC = −10 mA 130 450 

= −30 mA, IB = −3 mA −1V

VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz 4 pF

Rg = 100 kΩ, Function = FLAT

Publication date: April 2007 SJC00354AED

1

2SB1220G

This product complies with the RoHS Directive (EU 2002/95/EC).This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

−100

)
V

(

CE(sat)

− 0.1

−10

−1

CE(sat)

a

C

IC / IB = 10

Ta = 75°C

25°C

)

−25°C

IC  V

−100

−80

)

mA
(

C

−60

−40

Collector current I

−20

0

0 −12−10−8−2 −6−4

CE

I

B

Collector-emitter voltage VCE (V

hFE  I

600

500

FE

400

300

200

Forward current transfer ratio h

100

Ta = 75°C

C

25°C

−25°C

Ta = 25°C

= −10 mA

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

VCE = −5 V

)

IC  V

−120

−100

)

mA
(

C

−80

−60

−40

Ta = 75°C

Collector current I

−20

0

0 −2.0−1.6− 0.4 −1.2− 0.8

Base-emitter voltage VBE (V

fT  I

250

)

200

MHz
(

T

150

100

50

Transition frequency f

25°C

BE

−25°C

E

VCE = −5 V

VCB = −10 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

− 0.01

− 0.1 −1 −10 −100

Collector current IC (mA

Cob  V

10

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

− 0.1 −1 −10 −100

Collector current IC (mA

)

0

0.1 1 10 100

Emitter current IE (mA

)

)

SJC00354AED