Panasonic 2SB1218A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1218A

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD1819A

■ Features

• High forward current transfer ratio h

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

FE

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

−45 V

−45 V

−7V

−100 mA

−200 mA

150 mW

150 °C

−55 to +150 °C

+0.1

0.3

–0.0

132

(0.65)

(0.65)

1.3±0.1

2.0±0.2

10°

Marking Symbol: B

0.15

2.1±0.1

1.25±0.10 (0.425)

5°

+0.2

–0.1

0.9

0.9±0.10 to 0.1

SMini3-G1 Package

Unit: mm

+0.10
–0.05

0.2±0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No-rank

h

FE

160 to 260 210 to 340 290 to 460 160 to 460

Marking symbol BQ BR BS B

Product of no-rank is not classified and have no marking symbol for rank.

Publication date: March 2003 SJC00071BED

= −10 µA, IE = 0 −45 V

= −2 mA, IB = 0 −45 V

= −10 µA, IC = 0 −7V

VCB = −20 V, IE = 0 − 0.1 µA

VCE = −10 V, IB = 0 −100 µA

VCE = −10 V, IC = −2 mA 160 460 

= −100 mA, IB = −10 mA − 0.3 − 0.5 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF

1

2SB1218A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IB  V

−400

−350

−300

)
µA

(

−250

B

−200

−150

Base current I

−100

−50

0

0 − 0.4 − 0.8 −1.6−1.2

Base-emitter voltage VBE (V

a

BE

)

VCE = −5 V

= 25°C

T

a

IC  V

−120

−100

CE

Ta = 25°C

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

IC  V

−240

−200

)

mA
(

−160

C

−120

−80

Ta = 75°C

IB = −300 µA

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

)

BE

VCE = −5 V

25°C

−25°C

Collector current I

−40

0

0 −2.0−1.6− 0.4 −1.2− 0.8

)

Base-emitter voltage VBE (V

)

−60
VCE = −5 V
T

−50

)

mA
(

−40

C

−30

−20

Collector current I

−10

0

0 −300 −450−150

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

Collector-emitter saturation voltage V

− 0.001

−1 −10 −100

IC  I

B

= 25°C

a

Base current IB (µA

V

 I

CE(sat)

Ta = 75°C

25°C

−25°C

Collector current IC (mA

)

C

IC / IB = 10

−1 000

)

hFE  I

600

500

FE

400

Ta = 75°C

300

25°C

−25°C

200

Forward current transfer ratio h

100

0

−1 −10 −100

C

Collector current IC (mA

VCE = −10 V

−1 000

)

160

VCB = −10 V
T

140

)

120

MHz
(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 100

2

fT  I

= 25°C

a

Emitter current IE (mA

SJC00071BED

E

8

(pF)

7

ob

C

6

5

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

)

Cob  V

CB

IE = 0
f = 1 MHz
T

= 25°C

a

Collector-base voltage VCB (V

)