Panasonic 2SA2122G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2122G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5950G
Features
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
FE
Package
Code
SMini3-F2
Marking symbol : 7L
Pin name
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
-55 to +150 °C
stg
-60
-50
-7
-100
-200
mA
mA
150 mW
150
V
V
V
°C
1. Base
2. Emitter
3. Collector
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open) I
Collector-emitter cutoff current (Base open) I
Forward current transfer ratio h
Collector-emitter saturation voltage V
CBOIC
CEOIC
EBOIE
CBO
CEO
FE
CE(sat)IC
Transition frequency f
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
C
= -10 mA, IE = 0
= -2 mA, IB = 0
= -10 mA, IC = 0
-60
-50
-7
VCB = -20 V, IE = 0
VCE = -10 V, IB = 0
VCE = -10 V, IC = -2 mA 160 460
= -100 mA, IB = -10 mA
VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz
T
VCB = -10 V, IE = 0, f = 1 MHz 2.2 pF
ob
- 0.2 - 0.5
V
V
V
- 0.1 mA
-100 mA
V
Publication date: April 2007 SJC00351AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
2.00 ±0.20
+0.05
0.30
−0.02
0.425 ±0.050
3
12
(0.65)(0.65)
1.30
±0.10
(5°)
1.25 ±0.10
(0.89)
2.10 ±0.10
±0.10
0.90
(5°)
+0.05
0.13
−0.02
(0.49)
0 to 0.10
Loading...