Panasonic 2SA2084 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2084

Silicon PNP epitaxial planar type

For general amplification

■ Features

• High collector-emitter voltage (Base open) V

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

stg

−300 V

−300 V

−5V

−70 mA

−100 mA

200 mW

j

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: 7N

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CEOIC

EBOIE

h

FE

CE(sat)IC

Collector output capacitance C
(Common base, input open circuited)

Transition frequency f

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank P Q

h

FE

30 to 100 60 to 150

= −100 µA, IB = 0 −300 V

= −1 µA, , IC = 0 −5V

VCE = −10 V, IC = −5 mA 30 150 

= −10 mA, IB = −1 mA − 0.6 V

VCB = −10 V, IE = 0, f = 1 MHz 7 pF

ob

VCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHz

T

0.4±0.2

Publication date: January 2003 SJC00286AED

1

2SA2084

This product complies with the RoHS Directive (EU 2002/95/EC).

PT  T

250

a

)

mW

200

(

C

150

100

50

Collector power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (°C

V

 I

−1

(V)

CE(sat)

− 0.1

CE(sat)

/ I

= 10

I

C

B

Ta = 85°C

25°C

−25°C

IC  V

hFE  I

CE

I

B

C

VCE = −10 V

= −1.0 mA

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

− 0.2 mA

− 0.1 mA

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

0 −1.4− 0.4 − 0.6− 0.2 −1.2− 0.8 −1.0

100

(pF)

ob

C

10

−80

= 25°C

T

a

−70

−60

(mA)

C

−50

−40

−30

−20

Collector current I

−10

0

0 −12−2 −10−4 −8−6

)

C

Collector-emitter voltage VCE (V)

120

100

FE

Ta = 85°C

80

60

40

25°C

−25°C

IC  V

BE

VCE = −10 V

Ta = 85°C

25°C

−25°C

Base-emitter voltage VBE (V

Cob  V

CB

f = 1 MHz
T

= 25°C

a

)

Collector-emitter saturation voltage V

− 0.01

− 0.1

−1 −100−10

Collector current IC (mA)

Forward current transfer ratio h

20

0

−1 −10 −100 −1 000

Collector current IC (mA)

Collector output capacitance

(Common base, input open circuited)

1

0 −10 −20 −30 −40

Collector-base voltage VCB (V)

2

SJC00286AED