Panasonic 2SA2079 User Manual

Transistors

Unit: mm

1: Base
2: Emitter
3: Collector ML3-N2 Package

0.60±0.05

1.00±0.05

2

1

3

0.39

+0.01

−0.03

0.25

±0.05

0.25±0.05

0.50±0.05

0.65±0.01

0.15±0.05

2

1

0.35±0.01

0.05±0.03

0.05±0.03

3

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2079

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC5848

 Features

 High forward current transfer ratio h
 Suitable for high-density mounting and douwsizing of the equipment for

ultraminiature leadless package

Package: 0.6 mm × 1.0 mm (hight 0.39 mm)

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

FE

CBO

CEO

EBO

C

CP

C

j

stg

–45 V

–45 V

–7 V

–100 mA

–200 mA

100 mW

125

–55 to +125

°C

°C

Marking Symbol : 3D

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cut-off current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

CBO

I

CEO

FE

CE(sat)IC

T

C

ob

= –10 µA, IE = 0 –45 V

= –2 mA, IB = 0 –45 V

= –10 µA, IC = 0 –7 V

VCB = –20 V, IE = 0 – 0.1

VCE = –10 V, IB = 0 –100

VCE = –10 V, IC = –2 mA 180 390

µA

µA



= –100 mA, IB = –10 mA – 0.2 – 0.5 V

VCB = –10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = –10 V, IE = 0, f = 1 MHz 2.2 pF

Publication date : December 2004 SJC00326AED 1

2SA2079

0

20

40

60

80

100

120 140

0

20

40

60

80

100

120

2SA2162_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

0

−10

−20

−30

−40

−50

−60

0 −2

−4

−6 −8 −10 −12

Ta = −300 µA

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

2SA2079_IC-V

CE

Ta = 25°C

Base current IB (mA

)

Collector current I

C

(

mA

)

2SA2079_IC-I

B

0

− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2

0

−140

−120

−100

−80

−60

−40

−20

VCE = −10 V
Ta = 25°C

Base-emitter voltage VBE (V

)

Base current I

B

(m

A

)

2SA2079_IB-V

BE

0 − 0.8− 0.2 − 0.4 − 0.6

0

−1.0

−2.0

−2.5

−3.0

−3.5

− 0.5

−1.5

VCE = −10 V
Ta = 25°C

Base-emitter voltage VBE (V

)

Collector current I

C

(

mA

)

2SA2079_IC-V

BE

0

− 0.4

− 0.2

−1.0

−1.2

− 0.8

− 0.6

−20

−40

−60

−80

−100

−120

0

Ta = 75°C

25°C

−25°C

VCE = −10 V

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA

)

Ta = 75°C

25°C

−25°C

2SA2079_V

CE(sat)-IC

−1

−10

−100

− 0.01

− 0.1

−1
IC / IB = 10 V

Forward current transfer ratio h

FE

Collector current IC (mA

)

2SA2079_hFE-I

C

−1 −10 −100

−1000

0

300

250

200

150

100

50

Ta = 75°C

25°C

−25°C

VCE = −10 V

Collector-base voltage VCB (V

)

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

−8 −16 −24 −32 −40

0

10

1

2SA2079_Cob-V

CB

f = 1 MHz
Ta = 25°C

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  Ta IC  VCE IC  I

IB  VBE IC  VBE V

CE(sat)

B

 I

C

hFE  IC Cob  V

2 SJC00326AED

CB