Panasonic 2SA2078G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2078G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846G
■ Features
• High forward current transfer ratio h
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
FE
■ Package
• Code
SSSMini3-F2
• Marking Symbol: 7H
• Pin Name
1. Base
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +125 °C
stg
−60 V
−50 V
−7V
−100 mA
−200 mA
100 mW
125 °C
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
FE
CE(sat)IC
T
ob
= −10 µA, IE = 0 −60 V
= −100 µA, IB = 0 −50 V
= −10 µA, IC = 0 −7V
VCB = −20 V, IE = 0 − 0.1 µA
VCE = −10 V, IB = 0 −100 µA
VCE = −10 V, IC = −2 mA 180 390
= −100 mA, IB = −10 mA − 0.2 − 0.5 V
VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
VCB = −10 V, IE = 0, f = 1 MHz 2.2 pF
Publication date: May 2007 SJC00382AED
1
2SA2078G
This product complies with the RoHS Directive (EU 2002/95/EC).
120
)
100
mW
(
C
80
60
40
20
Collector power dissipation P
0
0
60
20
40
Ambient temperature Ta (°C
IB V
−3.5
VCE = −10 V
= 25°C
T
a
−3.0
)
−2.5
A
(m
B
−2.0
−1.5
Base current I
−1.0
− 0.5
0
0 − 0.8− 0.2 − 0.4 − 0.6
Base-emitter voltage VBE (V
PC T
VCE = −10 V
IC V
CE
Ta = −300 µA
−4
−6 −8 −10 −12
IC V
BE
Ta = 75°C
25°C
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−25°C
)
−140
VCE = −10 V
T
a
−120
)
−100
mA
(
C
−80
−60
−40
Collector current I
−20
0
0
−1
)
V
(
CE(sat)
− 0.1
a
)
mA
(
C
−60
−50
−40
−30
−20
Ta = 25°C
Collector current I
−10
80
120 140
100
)
BE
0
0 −2
Collector-emitter voltage VCE (V
−120
−100
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
0
− 0.2
)
Base-emitter voltage VBE (V
− 0.4
− 0.6
− 0.8
−1.0
−1.2
)
Collector-emitter saturation voltage V
− 0.01
−1
IC I
B
= 25°C
− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
I
−25°C
)
C
IC / IB = 10
)
Base current IB (mA
V
CE(sat)
Ta = 75°C
25°C
−10
Collector current IC (mA
−100
hFE I
300
Ta = 75°C
250
FE
200
150
100
50
Forward current transfer ratio h
0
25°C
−25°C
−1 −10 −100
Collector current IC (mA
2
C
VCE = −10 V
)
−1 000
10
Cob V
(pF)
ob
C
Collector output capacitance
(Common base, input open circuited)
1
−8 −16 −24 −32 −40
0
CB
f = 1 MHz
T
a
Collector-base voltage VCB (V
SJC00382AED
= 25°C
)
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