Panasonic 2SA2078 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2078

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC5846

■ Features

• High forward current transfer ratio h

• SSS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga­zine packing.

FE

0.23

+0.05
–0.02

0.33

+0.05
–0.02

5˚

3

12

(0.40)(0.40)

0.80

±0.05

1.20±0.05

±0.050.15 min.

0.80

Unit: mm

+0.05

0.10

–0.02

1.20±0.05
5˚

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +125 °C

stg

−60 V

−50 V

−7V

−100 mA

−200 mA

100 mW

125 °C

Marking Symbol: 7H

0.52±0.03

0 to 0.01

1 : Base
2 : Emitter
3 : Collector

SSSMini3-F1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

= −10 µA, IE = 0 −60 V

= −100 µA, IB = 0 −50 V

= −10 µA, IC = 0 −7V

VCB = −20 V, IE = 0 − 0.1 µA

VCE = −10 V, IB = 0 −100 µA

VCE = −10 V, IC = −2 mA 180 390 

= −100 mA, IB = −10 mA − 0.2 − 0.5 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 2.2 pF

0.15 min.

0.15 max.

Publication date: August 2003 SJC00302AED

1

2SA2078

This product complies with the RoHS Directive (EU 2002/95/EC).

120

)

100

mW
(

C

80

60

40

20

Collector power dissipation P

0

0

60

20

40

Ambient temperature Ta (°C

IB  V

−3.5
VCE = −10 V

= 25°C

T

a

−3.0

)

−2.5

A
(m

B

−2.0

−1.5

Base current I

−1.0

− 0.5

0

0 − 0.8− 0.2 − 0.4 − 0.6

Base-emitter voltage VBE (V

PC  T

VCE = −10 V

IC  V

CE

Ta = −300 µA

−4

−6 −8 −10 −12

IC  V

BE

Ta = 75°C

25°C

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

−25°C

)

−140
VCE = −10 V

T

−120

)

−100

mA
(

C

−80

−60

−40

Collector current I

−20

0

0

−1

)
V

(

CE(sat)

− 0.1

a

)

mA
(

C

−60

−50

−40

−30

−20

Ta = 25°C

Collector current I

−10

80

120 140

100

)

BE

0

0 −2

Collector-emitter voltage VCE (V

−120

−100

)

mA

(

−80

C

−60

−40

Collector current I

−20

0

0

− 0.2

)

Base-emitter voltage VBE (V

− 0.4

− 0.6

− 0.8

−1.0

−1.2

)

Collector-emitter saturation voltage V

− 0.01

−1

IC  I

B

= 25°C

a

− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2

 I

−25°C

)

C

IC / IB = 10

)

Base current IB (mA

V

CE(sat)

Ta = 75°C

25°C

−10

Collector current IC (mA

−100

hFE  I

300

Ta = 75°C

250

FE

200

150

100

50

Forward current transfer ratio h

0

25°C

−25°C

−1 −10 −100

C

Collector current IC (mA

VCE = −10 V

−1 000

)

10

(pF)

ob

C

Collector output capacitance

(Common base, input open circuited)

1

0

2

Cob  V

−8 −16 −24 −32 −40

CB

f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00302AED

)