Panasonic 2SA2021G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA2021G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC5609G

 Features

 High forward current transfer ratio h

FE

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

–60 V

–50 V

–7 V

–100 mA

–200 mA

100 mW

125

–55 to +125

°C

°C

 Package

Code

SSSMini3-F2

Pin Name

1. Base

2. Emitter

3. Collector

 Marking Symbol: 3E

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

I

CBO

CEO

FE

CE(sat)IC

T

C

= –10 mA, IE = 0 –60 V

= –100 mA, IB = 0 –50 V

= –10 mA, IC = 0 –7 V

VCB = –20 V, IE = 0 – 0.1

VCE = –10 V, IB = 0 –100

VCE = –10 V, IC = –2 mA 180 390

= –100 mA, IB = –10 mA – 0.3 – 0.5 V

VCB = –10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = –10 V, IE = 0, f = 1 MHz 2.7 15 pF

re

mA

mA



Publication date : November 2008 SJC00426BED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 12080

0

140

40

60

20

100

120

80

2SA2021G_PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 −4 −8 −12

0

−10

−20

−30

−40

−50

−60

−70

2SA2021G_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

Ta = 25°C

−50 µA

−100 µA

−150 µA

−200 µA

−250 µA

IB = −300 µA

0 − 0.2 − 0.6 − 0.8− 0.4 −1.0

0

−20

−40

−60

−80

−100

−120

−140

2SA2021G_IC-I

B

Collector current I

C

(

mA

)

Base current IB (V

)

VCE = −10 V
Ta = 25°C

0

− 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4

0

−30

−40

−50

−20

−10

−60

−70

−80

−90

−100

2SA2021G_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

VCE = −10 V

Ta = 85°C

25°C

−25°C

− 0.1 −1 −10 −100

− 0.01

− 0.1

−1

Collector current IC (mA

)

Collector-emitter saturation voltage V

CE(sat)

(

V

)

2SA2021G_V

CE(sat)-IC

IC /IB = 10

Ta = 85°C

25°C

−25°C

−1 −10 −100

−1 000

0

300

350

250

50

100

200

150

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SA2021G_hFE-I

C

VCE = −10 V

Ta = 85°C

25°C

−25°C

0 −8 −24−16 −32 −40

1

100

10

Collector-base voltage VCB (V

)

2SA2021G_Cob-V

CB

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

f = 1 MHz
Ta = 25°C

2SA2021G

PC  Ta IC  VCE IC  I

IC  VBE V

 IC hFE  I

CE(sat)

B

C

2 SJC00426BED

Cob  V

CB