Panasonic 2SA2010 Datasheet
Transistors
2SA2010
Silicon PNP epitaxial planer type
For DC-DC converter
For various driver circuits
■ Features
• Low collector to emitter saturation voltage
capacitance
• High-speed switching
Mini type 3-pin package, allowing downsizing and thinning of the
•
equipment.
• Complementary pair with 2SC5592
V
CE(sat)
, large current
10°
0.40
3
1
(0.95) (0.95)
±0.1
1.9
+0.20
2.90
–0.05
Unit: mm
+0.10
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
+0.10
0.16
–0.06
5°
0.4±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation
*
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
P
C
C
j
stg
−15 V
−15 V
−5V
−10 A
−2.5 A
600 mW
150 °C
−55 to +150 °C
Note)*: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
1
Forward current transfer ratio
Collector to emitter saturation voltage
*
1
*
Collector output capacitance C
Transition frequency f
2
Turn-on time
Storage time
Turn-off time
*
2
*
2
*
Note)*1: Rank classification
2: Reference to the measurement circuit.
*
V
CBO
CBO
CEO
EBO
h
FE1
h
FE2
CE(sat)
ob
T
t
on
t
stg
t
off
VCB = −10 V, IE = 0 − 0.1 µA
IC = −10 µA, IE = 0 −15 V
IC = −1 mA, IB = 0 −15 V
IE = −10 µA, IC = 0 −5V
VCE = −2 V, IC = −100 mA 200 560
VCE = −2 V, IC = −2.5 A 100
IC = −1 A, IB = −10 mA −140 mV
IC = −2.5 A, IB = −50 mA −270 −320 mV
VCB = 10 V, IE = 0, f = 1 MHz 40 pF
VCB = −10 V, IE = 50 mA 180 MHz
f = 200 MHz
Mini Type Package (3-pin)
Marking Symbol: AS
110 ns
0 to 0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
35 ns
10 ns
1
2SA2010 Transistors
■ Measurement Circuit
IB2
Input
PW = 20 µs
DC ≤ 1%
−201B1 = 201B2 = IC = −1.5 A
IB1
RB
470 µF
V
Output
= −5 V
CC
R
L
2
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