Panasonic 2SA2009G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA2009G

Silicon PNP epitaxial planar type

For low-frequency high breakdown voltage amplification

■ Features

• High collector-emitter voltage (Base open) V

• Low noise voltage NV

S-Mini type package, allowing downsizing and thinning of the

•

equipment and automatic insertion through the tape packing.

CEO

■ Package

• Code
SMini3-F2

• Marking Symbol: AR

• Pin Name

1. Base

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−120 V

−120 V

−5V

−20 mA

−50 mA

150 mW

150 °C

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Noise voltage NV VCE = −40 V, IC = −1 mA, GV = 80 dB 130 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

*

180 to 360 260 to 520 360 to 700

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

= −10 µA, IE = 0 −120 V

= −1 mA, IB = 0 −120 V

= −10 µA, IC = 0 −5V

VCB = −50 V, IE = 0 −100 nA

VCE = −50 V, IB = 0 −1 µA

VCE = −5 V, IC = −2 mA 180 700 

= −20 mA, IB = −2 mA − 0.6 V

VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz

Rg = 100 kΩ, Function = FLAT

Publication date: April 2007 SJC00349AED

1

2SA2009G

0

2

4

0

0

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

a

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

016

40 12080

Ambient temperature Ta (°C

V

 I

CE(sat)

−1

)

V

(

CE(sat)

Ta = 85°C

− 0.1

25°C

Collector-emitter saturation voltage V

− 0.01

− 0.1 −1 −10 −100

−25°C

Collector current IC (mA

)

C

IC / IB = 10

)

−60
Ta = 25°C

−50

)

mA

(

−40

C

−30

−20

Collector current I

−10

0

0 −1

Collector-emitter voltage

500

450

FE

400

350

300

250

200

150

100

Forward current transfer ratio h

50

0

−1 −10 −10

IC  V

CE

IB = −300 µA

VCE (V

hFE  I

C

Ta = 85°C

25°C

−25°C

VCE = −5 V

Collector current IC (mA

−10−8−2 −6−4

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

)

−30

−25

)

mA
(

−20

C

−15

−10

Collector current I

−5

0

)

10

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

IC  V

BE

VCE = −5 V

Ta = 85°C

25°C

−25°C

0

Base-emitter voltage VBE (V

Cob  V

−1 −10 −10

Collector-base voltage VCB (V

CB

−1.2−1.0− 0.8− 0.2 − 0.6− 0.4

f = 1 MHz

= 25°C

T

a

)

)

−1.

2

SJC00349AED