Panasonic 2SA2004 Datasheet

Power Transistors

2SA2004

Silicon PNP epitaxial planer type

For power amplification

■ Features

• High forward current transfer ratio h

• Satisfactory linearity of forward current transfer ratio h

• Dielectric breakdown voltage of the package: > 5 kV

• High-speed switching

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Peak collector current I

Collector current I

Collector power

dissipation

Junction temperature T

Storage temperature T

TC = 25°CPC20 W

Ta = 25°C 2.0

FE

CBO

CEO

EBO

CP

C

j

−55 to +150 °C

stg

−60 V

−60 V

−5V

−16 A

−8A

150 °C

Unit: mm

4.6

9.9

±0.3

±0.5

3.0

φ 3.2

0.8

2.54

5.08

±0.1

1.4

±0.2

1.6

±0.2

±0.1

±0.30

±0.50

±0.5

FE

15.0

±0.2

13.7

±0.2

4.2

Solder Dip

123

±0.2

2.9

±0.2

2.6

±0.1

0.55

±0.15

1: Base
2: Collector
3: Emitter

TO-220D Package

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Collector to emitter voltage V

Forward current transfer ratio h

Collector to emitter saturation voltage V

Base to emitter saturation voltage V

Turn-on time t

Storage time t

Fall time t

CBO

I

CEO

CEO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

stg

VCB = −60 V, IE = 0 −100 µA

VCE = −60 V, IE = 0 −100 µA

IC = −10 mA, IB = 0 −60 V

VCE = −2 V, IC = − 0.1 A 100 230

VCE = −2 V, IC = −5 A 30

= −5 A, IB = − 0.25 A −1.2 V

= −5 A, IC = − 0.25 A −1.7 V

IC = −4 A, IB1 = −400 mA 0.2 0.5 µs

on

IB2 = 400 mA, VCC = 50 V 0.1 0.15 µs

f

0.5 1.0 µs

1