Panasonic 2SA1961 Datasheet
Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
Features
■
●
High collector to emitter voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–200
–200
– 0.1
–55 ~ +150
–5
–70
1
150
Unit
V
V
V
A
mA
W
˚C
˚C
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1.2±0.1
+
0.1
0.45
–
0.05
1.05
±0.05 (1.45)
0.21.01.0
–0.05
+0.1
321
0.45
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.65
max.
Unit: mm
2.5±0.1
0.5
4.5±0.114.5±0.5
2.5±0.1
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Symbol
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Rank P Q
h
FE
30 ~ 100 60 ~ 150
Conditions
IC = –100µA, IB = 0
IE = –1µA, IC = 0
*1
VCE = –10V, IC = –5mA
IC = –50mA, IB = –5mA
VCB = –5V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–200
–5
30
typ
30
max
Unit
V
V
150
–2.5
–
V
MHz
7
pF
1
Transistor
2SA1961
PC—Ta IC—V
2.0
)
W
(
1.6
C
1.2
0.8
0.4
Collector power dissipation P
0
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
Ta=75˚C
25˚C
–25˚C
–1 –10 –100 –1000–3 –30 –300
Collector current IC (mA
)
)
CE
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
IB=–1.0mA
Collector to emitter voltage VCE (V
hFE—I
C
240
210
FE
180
150
120
90
60
Forward current transfer ratio h
30
Ta=75˚C
25˚C
–25˚C
0
–1 –10 –100 –1000–3 –30 –300
VCE=–10V
Collector current IC (mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
)
IC—V
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
Cob—V
24
)
pF
(
20
ob
16
12
8
4
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Ta=75˚C
BE
25˚C
CB
VCE=–10V
–25˚C
f=1MHz
I
=0
E
Ta=25˚C
)
)
2
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