Panasonic 2SA1890 Datasheet
Transistor
2SA1890
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC5026
Features
■
●
Low collector to emitter saturation voltage V
●
High collector to emitter voltage V
●
Mini type package, allowing downsizing of the equipment and
CEO
.
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25˚C)
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–80
–80
–5
–1.5
–1
150
–55 ~ +150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : 1Z
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R
h
FE1
120 ~ 240 170 ~ 340
Conditions
VCB = –40V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –100mA
VCE = –2V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–80
–80
–5
120
60
typ
– 0.2
– 0.85
120
15
*2
Pulse measurement
max
– 0.1
340
– 0.3
–1.2
30
Unit
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SA1890
PC—Ta IC—V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=10
Ta=–25˚C
25˚C
–75˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
)
CE
)
(
A
– 0.8
C
– 0.6
– 0.4
–1.2
–1.0
IB=–8mA
Ta=25˚C
–7mA
Collector current I
– 0.2
0
0 –10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
300
FE
250
Ta=75˚C
200
25˚C
150
100
Forward current transfer ratio h
50
0
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
VCE=–2V
– 0.3 –3
Collector current IC (A
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
)
V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
)
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
CE(sat)—IC
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT—I
E
Emitter current IE (mA
IC/IB=10
)
VCB=–10V
Ta=25˚C
)
Cob—V
12
)
pF
(
10
ob
8
6
4
2
Collector output capacitance C
0
1 10 100 10003 30 300
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
Loading...