Panasonic 2SA1858 Datasheet

Transistor

2SA1858

Silicon PNP epitaxial planer type

For general amplification

Features

■

●

High collector to emitter voltage V

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V
V
V
I
I
P
T
T

CP

C

CBO

CEO

EBO

C

j

stg

Symbol

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

CEO

.

Ratings

–300
–300

–5

–100

–70

1

150

–55 ~ +150

IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = –1mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

Unit

V
V

V
mA
mA

W
˚C
˚C

Conditions

1.27

5.0±0.2

123

2.54±0.15

min

–300

–5
30

50

0.7±0.2

0.7±0.1

+0.15
–0.1

0.45

1.27

typ7max

4.0±0.2

8.0±0.2

13.5±0.5

+0.15
–0.1

0.45

2.3±0.2

1:Emitter
2:Collector
3:Base
TO–92NL Package

– 0.6

Unit: mm

Unit

V
V

150

V

MHz

pF

*

hFE Rank classification

Rank P Q

h

FE

30 ~ 100 60 ~ 150

1

Transistor

2SA1858

PC—Ta IC—V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

Collector current IC (mA

)

IC/IB=10

Ta=75˚C

–25˚C

)

CE

–100

–90

–80

)

mA

(

–70

C

–60

–50

–40

–30

Collector current I

–20

–10

0

0 –12–10–8–2 –6–4

IB=–1.0mA

Collector to emitter voltage VCE (V

hFE—I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Ta=75˚C

25˚C

–25˚C

VCE=–10V

Collector current IC (mA

Ta=25˚C

–0.9mA
–0.8mA

–0.7mA
–0.6mA
–0.5mA
–0.4mA

–0.3mA
–0.2mA
–0.1mA

)

–120

–100

)
mA

(

–80

C

–60

–40

Collector current I

–20

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

120

)

100

MHz

(

T

80

60

40

20

Transition frequency f

0

0.1 1 10 1000.3 3 30

IC—V

BE

VCE=–10V

25˚C

Ta=75˚C

–25˚C

fT—I

E

VCB=–10V
Ta=25˚C

Emitter current IE (mA

)

)

Cob—V

20

)

18

pF

(

16

ob

14

12

10

8

6

4

2

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz
Ta=25˚C

I

—Ta

CEO

10000

3000

1000

VCE=–120V

)

300

)
Ta

(

100

Ta=25˚C

(

CEO

I

30

CEO

I

10

3

1

0 24020016040 12080

)

Ambient temperature Ta (˚C

)