Panasonic 2SA1816 Datasheet
Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Features
■
●
High collector to emitter voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
f
T
C
ob
NV
.
CEO
Ratings
–150
–150
–100
–55 ~ +150
Unit
V
V
–5
V
mA
–50
300
150
mA
mW
˚C
˚C
Conditions
VCB = –100V, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = – 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
min
1.271.27
2.54±0.15
typ
+0.2
0.1
–
0.45
0.7±0.1
max
–1
–150
–5
90
450
–1
200
5
150
Unit: mm
2.0±0.2
Unit
µA
V
V
V
MHz
pF
mV
*1
hFE Rank classification
Rank Q R S T
h
FE
90 ~ 155 130 ~ 220 185 ~ 330 260 ~ 450
1
Loading...