Panasonic 2SA1806J User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1806J

Silicon PNP epitaxial planar type

For high speed switching

■ Features

• High speed switching

• Low collector-emitter saturation voltage V

CE(sat)

• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

■ Absolute Maximum Ratings Ta = 25°C

0.27

±0.02

5˚

+0.05

1.60

–0.03

1.00

±0.05

3

12

(0.50)(0.50)

±0.05

0.80

+0.05

0.85

(0.80)

+0.05

0 to 0.02

0.70

–0.03

–0.03

±0.05

1.60

0.12

5˚

+0.03
–0.01

Unit: mm

(0.375)

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

−15 V

−15 V

−4V

−50 mA

−100 mA

125 mW

125 °C

−55 to +125 °C

0.10 max.

1: Base
2: Emitter
3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Marking Symbol: AK

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Turn-on time t

Turn-off time t

Storage time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE1

50 to 120 90 to 150

Ranking is not given for any product.

I

CBO

I

EBO

*

FE1

h

FE2

CE(sat)IC

T

ob

on

off

stg

VCB = −8 V, IE = 0 − 0.1 µA

VCE = −3 V, IC = 0 − 0.1 µA

VCE = −1 V, IC = −10 mA 50 150 

VCE = −1 V, IC = −1 mA 30

= −10 mA, IB = −1 mA − 0.1 − 0.2 V

VCB = −10 V, IE = 10 mA, f = 200 MHz 800 1 500 MHz

VCB = −5 V, IE = 0, f = 1 MHz 1 pF

Refer to the switching time

12 ns

measurement circuit 20 ns

19 ns

Publication date: August 2003 SJC00300AED

1

2SA1806J

This product complies with the RoHS Directive (EU 2002/95/EC).

Switching time measurement circuit

t

, t

Test circuit t

on

off

V

BB

2 kΩ 62 Ω

0.1 µF

V

IN

52 Ω

51 Ω

0

IN

= Ground

BB

10%

90%

t

on

V

V

OUT

V

IC  V

−80

−70

)

−60

mA
(

C

−50

−40

−30

Collector current I

−20

−10

0

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

90%

10%

t

off

= 9.8 V

V

IN

V

= −8.0 V

BB

CE

IB = −600 µA

VCC = −1.5 V

V

OUT

Ta = 25°C

−500 µA

−400 µA

−300 µA

−200 µA

−100 µA

)

Test circuit

stg

V

= −10 V

BB

VCC = −3 V

508 Ω 30 Ω

0.1 µF

V

IN

34 Ω

51 Ω

0

V

IN

V

OUT

)

−10

V

(

CE(sat)

−1.0

− 0.1

Collector-emitter saturation voltage V

− 0.01

−1 −10 −100 −1000

T

a

V

= 75°C

25°C

90%

t

stg

V

IN

CE(sat)

90%

= 9.0 VVIN = −5.8 V

 I

−25°C

Collector current IC (mA

V

OUT

C

IC / IB = 10

PC  T

60

BE(sat)

80

 I

a

100

C

120 140

)

IC / IB = 10

75°C

140

)

120

mW

(

C

100

80

60

40

20

Collector power dissipation P

0

0

20

40

Ambient temperature Ta (°C

V

−10

)
V

(

BE(sat)

−1

Ta = −25°C

25°C

Base-emitter saturation voltage V

− 0.1

)

−1− 0.1 −10 −100 −1000

Collector current IC (mA

)

hFE  I

25°C

−25°C

C

VCE = −1 V

10

(pF)

ob

C

1

Collector output capacitance

(Common base, input open circuited)

0.1

0 2 4 6 8 1012141618

)

180

160

FE

140

120

100

80

60

40

Forward current transfer ratio h

20

0

− 0.1 −1 −10 −100

Ta = 75°C

Collector current IC (mA

2

Cob  V

CB

f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00300AED

)