Panasonic 2SA1806 Datasheet

Transistor

2SA1806

Silicon PNP epitaxial planer type

For high speed switching

Features

■

●

High-speed switching.

●

Low collector to emitter saturation voltage V

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–15
–15

–4

–100

–50
125
125

–55 ~ +125

CE(sat)

.

Unit

V
V

V
mA
mA

mW

˚C
˚C

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : AK

3

Unit: mm

–0.05

+0.1

0.2

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time

*

h

Rank classification

FE1

Symbol

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

t

on

t

off

t

stg

Rank Q R

h

FE1

50 ~ 120 90 ~ 150

Marking Symbol AKQ AKR

Conditions

VCB = –8V, IE = 0
VEB = –3V, IC = 0

*

VCE = –1V, IC = –10mA
VCE = –1V, IC = –1mA
IC = –10mA, IB = – 1mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
(Note 1) Next page
(Note 1) Next page
(Note 1) Next page

min

50
30

800

typ

– 0.1
1500

1
12
20
19

max

– 0.1
– 0.1

150

– 0.2

Unit

µA
µA

V

MHz

pF

ns
ns
ns

1

Transistor

2SA1806

Switching time measurement circuit

t

, t

Test Circuit t

on

off

V

BB

2kΩ 62Ω

0.1µF

51Ω

0

V

in

V

BB

10%

t

ontoff

=–5.8V

=Ground

52Ω

V

in

V

in

V

out

IC—V

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –12–10–8–2 –6–4

Collector to emitter voltage VCE (V

90%

90%

V
V

CE

=9.8V

in
BB

VCC=–1.5V

10%

=–8.0V

Ta=25˚C

IB=–600µA

–500µA
–400µA

–300µA

–200µA

–100µA

PC—Ta

T est Circuit

stg

VBB=–10V

V

out

V

in

V

in

V

out

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

–1 –10 –100 –1000–3 –30 –300

)

508Ω 30Ω

0.1µF

34Ω

51Ω

0

V

CE(sat)—IC

Collector current IC (mA

V

t

off

in

90%

90%

=9.0V

VCC=–3V

V

out

IC/IB=10

Ta=75˚C
25˚C
–25˚C

)

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

BE(sat)—IC

–100

)
V

(

–30

BE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

–1 –10 –100 –1000–3 –30 –300

IC/IB=10

Ta=–25˚C
25˚C
75˚C

Collector current IC (mA

)

)

hFE—I

C

240

FE

200

160

120

Ta=75˚C

80

25˚C

–25˚C

40

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

2

VCE=–10V

fT—I

2400

)

2000

MHz

(

T

1600

1200

800

400

Transition frequency f

E

VCB=–10V
f=200MHz
Ta=25˚C

)
pF

(

2.4

2.0

ob

1.6

1.2

0.8

0.4

Cob—V

CB

IE=0
f=1MHz
Ta=25˚C

Collector output capacitance C

0

1 3 10 30 100

)

Emitter current IE (mA

)

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

)