Panasonic 2SA1791G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA1791G

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC4656G

■ Features

• High transition frequency f

• Small collector output capacitance C

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing.

T

ob

■ Package

• Code
SSMini3-F3

• Marking Symbol: AL

• Pin Name

1. Base

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +125 °C

stg

−50 V

−50 V

−5V

−50 mA

125 mW

125 °C

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

*

200 to 400 250 to 500

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

ob

= −10 µA, IE = 0 −50 V

= −1 mA, IB = 0 −50 V

= −10 µA, IC = 0 −5V

VCB = −10 V, IE = 0 − 0.1 µA

VCE = −10 V, IB = 0 −100 µA

VCE = −10 V, IC = −2 mA 200 500 

= −10 mA, IB = −1 mA − 0.1 − 0.3 V

VCB = −10 V, IE = 2 mA, f = 200 MHz 250 MHz

VCB = −10 V, IE = 0, f = 1 MHz 1.5 pF

Publication date: May 2007 SJC00380AED

1

2SA1791G

This product complies with the RoHS Directive (EU 2002/95/EC).

140

PC  T

)

120

mW
(

C

100

80

60

40

20

Collector power dissipation P

0

0

Ambient temperature Ta (°C

V

−1

(V)

CE(sat)

− 0.1

Ta = 85°C

25°C

40

CE(sat)

80

 I

−25°C

a

120

−90

−80

−70

−60

(mA)

C

−50

−40

−30

Collector current I

−20

−10

0

)

C

/ IB = 10

I

C

600

500

FE

400

300

200

IC  V

CE

Ta = 25°C

0 −12−10−8−2 −6−4

IB = −300 µA

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

Collector-emitter voltage VCE (V)

hFE  I

C

Ta = 85°C

25°C

−25°C

−50

−40

)

mA
(

C

−30

−20

Collector current I

−10

0

3.5

(pF)

ob

3.0

C

2.5

2.0

1.5

1.0

IC  V

BE

V

= −10 V

CE

25°C

Ta = 85°C

−25°C

0 −0.2 −0.6 −0.8 −1.0 −1.2−0.4 −1.4

f = 1 MHz
T

= 25°C

a

)

Base-emitter voltage VBE (V

Cob  V

CB

Collector-emitter saturation voltage V

− 0.01

− 0.1

−1 −10 −100

Collector current IC (mA)

Forward current transfer ratio h

100

0

−1 −10 −100

V

Collector current IC (mA

= −10 V

CE

0.5

Collector output capacitance

(Common base, input open circuited)

0

0 −40−10 −30−20

)

Collector-base voltage V

(V)

CB

2

SJC00380AED