Panasonic 2SA1791 Datasheet
Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
Features
■
●
High transition frequency fT.
●
Small collector output capacitance Cob.
●
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Ratings
–50
–50
–5
–50
125
125
–55 ~ +125
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –10mA, IB = –1mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
mA
mW
˚C
˚C
Conditions
1.6±0.15
0.8±0.1 0.40.4
1
0.5
1.6±0.1
1.0±0.1
0.5
2
0.3
0.75±0.15
0.45±0.1
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
0.2±0.1
0 to 0.1
Marking symbol : AL
min
–50
–50
–5
200
typ
– 0.1
250
1.5
max
– 0.1
–100
– 0.3
500
3
Unit: mm
–0.05
+0.1
0.2
–0.05
+0.1
0.15
Unit
µA
µA
MHz
pF
V
V
V
V
*
hFE Rank classification
Rank Q R
h
FE
200 ~ 400 250 ~ 500
Marking Symbol ALQ ALR
1
Transistor
2SA1791
PC—Ta IC—V
150
)
mW
125
(
C
100
75
50
25
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
IC/IB=10
CE
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
600
FE
500
400
300
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
C
VCE=–10V
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
)
600
)
500
MHz
(
T
400
300
0
IC—V
BE
VCE=–10V
25˚C
Ta=75˚C
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
–25˚C
Base to emitter voltage VBE (V
fT—I
E
VCB=–10V
Ta=25˚C
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
–1 –10 –100 –1000–3 –30 –300
6
)
pF
(
5
ob
4
3
2
1
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Cob—V
CB
IE=0
f=1MHz
Ta=25˚C
)
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
)
200
100
Transition frequency f
0
0.1 1 10 1000.3 3 30
)
Emitter current IE (mA
)
2
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