Panasonic 2SA1790G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1790G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
T
■ Package
• Code
SSMini3-F3
• Marking Symbol: E
• Pin Name
1. Base
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +125 °C
stg
−30 V
−20 V
−5V
−30 mA
125 mW
125 °C
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Transition frequency f
Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
Reverse transfer capacitance (Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank B C
h
FE
*
70 to 140 110 to 220
I
VCE = −10 V, IC = −1 mA − 0.7 V
BE
VCB = −10 V, IE = 0 − 0.1 µA
CBO
I
VCE = −20 V, IB = 0 −100 µA
CEO
I
VEB = −5 V, IC = 0 −10 µA
EBO
h
VCE = −10 V, IC = −1 mA 70 220
FE
CE(sat)IC
C
= −10 mA, IB = −1 mA − 0.1 V
VCB = −10 V, IE = 1 mA, f = 200 MHz 150 30 0 MHz
T
VCB = −10 V, IE = 1 mA, f = 2 MHz 22 50 Ω
rb
VCB = −10 V, IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF
re
Publication date: May 2007 SJC00379AED
1
2SA1790G
This product complies with the RoHS Directive (EU 2002/95/EC).
T
P
C
)
120
mW
(
C
80
40
Collector power dissipation P
0
0 80 12040
Ambient temperature Ta (°C
hFE I
100
VCE = −10 V
FE
80
60
40
25°C
−25°C
a
C
Ta = 75°C
IC V
−25
T
= 25°C
a
−20
(mA)
C
−15
−10
Collector current I
−5
0
0 −12−2 −10−4 −8−6
)
Collector-emitter voltage VCE (V)
Cob V
100
(pF)
ob
C
10
CE
CB
= −250 µA
I
B
−200 µA
−150 µA
−100 µA
−50 µA
f = 1 MHz
T
= 25°C
a
−10
(V)
CE(sat)
−1
− 0.1
Collector-emitter saturation voltage V
− 0.01
−1
V
I
CE(sat)
/ I
= 10
I
C
B
Ta = 75°C
25°C
−25°C
−10 −100
Collector current IC (mA)
C
20
Forward current transfer ratio h
0
− 0.1 −1 −100−10
Collector current IC (mA)
Collector output capacitance
(Common base, input open circuited)
1
0 −5 −10 −15 −20
Collector-base voltage VCB (V
)
2
SJC00379AED
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