Panasonic 2SA1790 Datasheet

Transistor

2SA1790

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC4626

Features

■

●

High transition frequency fT.

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

f

T

V

CE(sat)

V

BE

NF
Z

rb

C

re

Ratings

–30
–20

–5
–30
125
125

–55 ~ +125

VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = 1mA
VCB = –10V, IE = 1mA, f = 200MHz
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA
f = 10.7MHz

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : E

min

70

150

typ

300
– 0.1
– 0.7

2.8
22

1.2

max

– 0.1
–100

–10
220

4.0
60

2.0

3

Unit: mm

–0.05

+0.1

0.2

–0.05

+0.1

0.15

Unit

µA

µA

MHz

dB

pF

V
V

Ω

*

hFE Rank classification

Rank B C

h

FE

70 ~ 140 110 ~ 220

Marking Symbol EB EC

1

Transistor

2SA1790

PC—Ta IC—V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE—I

C

120

FE

100

80

60

40

Ta=75˚C

25˚C

–25˚C

VCE=–10V

CE

)

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

Cob—V

6

)
pF

(

5

ob

4

3

2

CB

Ta=25˚C

IB=–250µA

–200µA

–150µA

–100µA

–50µA

f=1MHz
I

=0

E

Ta=25˚C

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

)

)
pF

(

re

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Cre—V

5

4

3

2

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)

20

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

fT—I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

0.1 1 10 1000.3 3 30

VCB=–10V
Ta=25˚C

Emitter current IE (mA

1

1

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector to base voltage VCB (V

PG — I

C

24

20

VCE=–10V
f=100MHz
Ta=25˚C

)
dB

(

16

12

8

Power gain PG

4

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector current IC (mA

)

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

NF — I

E

5

4

)
dB

(

3

2

Noise figure NF

1

0

0.1 0.3 1 3 10

VCB=–10V
f=100MHz
Ta=25˚C

Emitter current IE (mA

)

)

2