Panasonic 2SA1762 Datasheet

Transistor

2SA1762

Silicon PNP epitaxial planer type

For low-frequency driver amplification
Complementary to 2SC4606

Features

■

●

High collector to emitter voltage V

●

Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

– 0.5

–55 ~ +150

–80
–80

–5
–1

1

150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

130 ~ 220 185 ~ 330

Conditions

VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0

*

VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1 MHz

min

–80
–80

–5

130

50

typ

100

– 0.2

– 0.85

85
11

max

– 0.1

330

– 0.4
–1.2

20

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SA1762

PC—Ta IC—V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)

–10

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

–1 –10 –100 –1000–3 –30 –300

Collector current IC (mA

)

)

CE

–1.2

–1.0

)
A

(

– 0.8

C

– 0.6

– 0.4

Collector current I

– 0.2

0

0 –10–8–2 –6–4

IB=–10mA

Ta=25˚C

–9mA
–8mA

–7mA
–6mA

–5mA
–4mA
–3mA

–2mA

–1mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

–100

)
V

(

–30

BE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

–1 –10 –100 –1000–3 –30 –300

Ta=–25˚C

IC/IB=10

25˚C

75˚C

Collector current IC (mA

IC—I

B

)
A

(

–1.2

–1.0

– 0.8

C

– 0.6

– 0.4

VCE=–10V
Ta=25˚C

Collector current I

– 0.2

0

0 –10–8–2 –6–4

)

Base current IB (mA

hFE—I

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

–1 –10 –100 –1000–3 –30 –300

)

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

C

VCE=–10V

)

fT—I

120

)

100

MHz

(

T

80

60

40

20

Transition frequency f

0

1 10 100 10003 30 300

Emitter current IE (mA

2

E

VCB=–10V
f=200MHz
Ta=25˚C

)

)
pF

(

Cob—V

60

50

ob

40

30

20

10

CB

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

I

—Ta

CBO

4

10

VCB=–20V

3

10

)

)
Ta

(

2

10

Ta=25˚C

(

CBO

I

CBO

I

10

1

0 18060 120

)

Ambient temperature Ta (˚C

)