Panasonic 2SA1748 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1748

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC4562

+0.1

0.3

–0.0

(0.425)

0.15

Unit: mm

+0.10
–0.05

■ Features

±0.10

• High transition frequency f

• Small collector output capacitance C

T

ob

• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

−50 V

−50 V

−5V

−50 mA

150 mW

150 °C

−55 to +150 °C

132

(0.65)

(0.65)

1.3

±0.1

2.0

±0.2

10˚

Marking Symbol: AL

±0.1

2.1

1.25

5˚

+0.2

–0.1

±0.1

0.9

0.9

0 to 0.1

SMini3-G1 Package

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

±0.1

0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

200 to 400 250 to 500

= −10 µA, IE = 0 −50 V

= −1 mA, IB = 0 −50 V

= −10 µA, IC = 0 −5V

VCB = −10 V, IE = 0 − 0.1 µA

VCE = −10 V, IB = 0 −100 µA

VCE = −10 V, IC = −2 mA 200 500 

= −10 mA, IB = −1 mA − 0.1 − 0.3 V

VCB = −10 V, IE = 2 mA, f = 200 MHz 250 MHz

VCB = −10 V, IE = 0, f = 1 MHz 1.5 pF

Publication date: March 2003 SJC00028BED

1

2SA1748

This product complies with the RoHS Directive (EU 2002/95/EC).

200

PC  T

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

−100

)
V

(

CE(sat)

− 0.1

−10

−1

CE(sat)

Ta = 75°C

25°C

−25°C

a

C

IC / IB = 10

IC  V

hFE  I

25°C

CE

Ta = 25°C

IB = −300 µA

C

VCE = −10 V

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

−60

−50

)

mA

(

−40

C

−30

−20

Collector current I

−10

0

0 −1.2−1.0− 0.8− 0.2 − 0.6− 0.4

)

600

500

)

MHz
(

400

T

300

200

Transition frequency f

100

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

0 −12−10−8−2 −6−4

)

Collector-emitter voltage VCE (V

600

500

FE

Ta = 75°C

400

300

200

Forward current transfer ratio h

100

−25°C

IC  V

BE

VCE = −10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = −10 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

− 0.01

−1 −10 −100 −1 000

Collector current IC (mA

6

Cob  V

(pF)

ob

5

C

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

− 0.1 −1 −10 −100

Collector current IC (mA

)

0

0.1 1 10 100

Emitter current IE (mA

)

)

SJC00028BED