Panasonic 2SA1739 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1739

Silicon PNP epitaxial planar type

For high speed switching

Complementary to 2SC3938

+0.1

0.3

–0.0

0.15

Unit: mm

+0.10
–0.05

■ Features

• High speed switching

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

−15 V

−15 V

−4V

−50 mA

−100 mA

150 mW

150 °C

−55 to +150 °C

132

(0.65)

(0.65)

1.3±0.1

2.0±0.2

10˚

Marking Symbol: AX

2.1±0.1

1.25±0.10 (0.425)

5˚

+0.2

–0.1

0.9

0.9±0.10 to 0.1

SMini3-G1 Package

0.2±0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Turn-on time t

Turn-off time t

Storage time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R No-rank

h

FE1

50 to 120 90 to 150 50 to 150

Marking symbol AXQ AXR AX

Product of no-rank is not classified and have no marking symbol for rank.

I

CBO

I

EBO

*

FE1

h

FE2

CE(sat)IC

T

ob

on

off

stg

VCB = −8 V, IE = 0 − 0.1 µA

VCE = −3 V, IC = 0 − 0.1 µA

VCE = −1 V, IC = −10 mA 50 150 

VCE = −1 V, IC = −1 mA 30

= −10 mA, IB = −1 mA − 0.1 − 0.2 V

VCB = −10 V, IE = 10 mA, f = 200 MHz 800 1 500 MHz

VCB = −5 V, IE = 0, f = 1 MHz 1 pF

Refer to the switching time

12 ns

measurement circuit 20 ns

19 ns

Publication date: March 2003 SJC00027BED

1

2SA1739

This product complies with the RoHS Directive (EU 2002/95/EC).

Switching time measurement circuit

t

, t

Test circuit t

on

off

0.1 µF

V

IN

51 Ω

0

V

IN

V

OUT

V

= Ground

BB

−60

−50

)

mA
(

−40

C

−30

−20

Collector current I

−10

V

BB

2 kΩ 62 Ω

52 Ω

10%

90%

t

on

IC  V

90%

t

off

= 9.8 V

V

IN

V

= −8.0 V

BB

CE

IB = −600 µA

VCC = −1.5 V

10%

Ta = 25°C

−500 µA

−400 µA

−300 µA

−200 µA

−100 µA

V

OUT

PC  T

BE(sat)

 I

a

C

IC / IB = 10

T

25°C

−25°C

= 75°C

a

)

Test circuit

stg

V

= −10 V

BB

VCC = −3 V

508 Ω 30 Ω

V

0.1 µF

V

IN

34 Ω

OUT

51 Ω

0

V

IN

V

OUT

90%

90%

t

stg

= 9.0 VVIN = −5.8 V

V

IN

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

−100

)
V

(

CE(sat)

− 0.1

−10

 I

CE(sat)

−1

C

IC / IB = 10

= 75°C

T

a

25°C

−25°C

−100

)
V

(

CE(sat)

− 0.1

−10

−1

V

0

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

hFE  I

240

200

FE

160

120

Ta = 75°C

80

25°C

Forward current transfer ratio h

−25°C

40

0

− 0.1 −1 −10 −100

C

Collector current IC (mA

2

VCE = −10 V

)

Collector-emitter saturation voltage V

− 0.01

−1 −10 −100 −1 000

E

VCB = −10 V
f = 200 MHz

= 25°C

T

a

)

)

)

Collector current IC (mA

fT  I

2 400

2 000

)

MHz

(

1 600

T

1 200

800

Transition frequency f

400

0

1 10 100

Emitter current IE (mA

Collector-emitter saturation voltage V

− 0.01

−1 −10 −100 −1 000

Collector current IC (mA

Cob  V

2.4

(pF)

ob

2.0

C

1.6

1.2

0.8

0.4

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

)

)

SJC00027BED