Panasonic 2SA1738 User Manual
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
0.40
3
+0.10
–0.05
0.16
Unit: mm
+0.10
–0.06
• High speed switching (Pair with 2SC3757)
+0.25
–0.05
+0.2
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
10˚
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
2
1.50
(0.65)
–0.3
2.8
5˚
±0.2
0.4
Parameter Symbol Rating Unit
+0.2
–0.1
+0.3
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
−15 V
−15 V
−4V
−50 mA
−100 mA
200 mW
150 °C
Marking Symbol: AK
–0.1
1.1
1.1
0 to 0.1
Mini3-G1 Package
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Turn-on time t
Turn-off time t
Storage time t
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE1
50 to 120 90 to 150
I
CBO
I
EBO
*
FE1
h
FE2
CE(sat)IC
T
ob
on
off
stg
VCB = −8 V, IE = 0 − 0.1 µA
VEB = −3 V, IC = 0 − 0.1 µA
VCE = −1 V, IC = −10 mA 50 150
VCE = −1 V, IC = −1 mA 30
= −10 mA, IB = −1 mA − 0.1 − 0.2 V
VCB = −10 V, IE = 10 mA, f = 200 MHz 800 1 500 MHz
VCB = −5 V, IE = 0, f = 1 MHz 1 pF
Refer to the switching time measurement circuit
12 ns
20 ns
19 ns
Publication date: November 2002 SJC00026BED
1
2SA1738
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching time measurement circuit
t
, t
Test circuit t
on
off
V
BB
2 kΩ 62 Ω
0.1 µF
V
IN
52 Ω
51 Ω
0
IN
= Ground
BB
10%
90%
t
on
V
V
OUT
V
IC V
−60
−50
)
mA
(
−40
C
−30
−20
Collector current I
−10
0
0 −12−10−8−2 −6−4
Collector-emitter voltage VCE (V
V
V
90%
t
off
= 9.8 V
IN
BB
CE
VCC = −1.5 V
10%
= −8.0 V
Ta = 25°C
IB = −600 µA
−500 µA
−400 µA
−300 µA
−200 µA
−100 µA
V
OUT
)
Test circuit
stg
V
= −10 V
BB
VCC = −3 V
508 Ω 30 Ω
0.1 µF
V
IN
34 Ω
51 Ω
0
V
IN
V
OUT
−100
)
V
(
CE(sat)
−10
−1
− 0.1
Collector-emitter saturation voltage V
− 0.01
−1 −10 −100 −1 000
V
90%
t
stg
V
IN
CE(sat)
90%
= 9.0 VVIN = −5.8 V
I
Collector current IC (mA
V
OUT
C
IC / IB = 10
= 75°C
T
a
25°C
−25°C
PC T
BE(sat)
I
a
C
IC / IB = 10
T
25°C
75°C
= −25°C
a
)
240
)
200
mW
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
−100
)
V
(
BE(sat)
−10
−1
− 0.1
Base-emitter saturation voltage V
− 0.01
−1 −10 −100 −1 000
)
Collector current IC (mA
)
hFE I
240
200
FE
160
120
Ta = 75°C
80
25°C
Forward current transfer ratio h
−25°C
40
0
− 0.1 −1 −10 −100
C
VCE = −10 V
Collector current IC (mA
)
2 400
2 000
)
MHz
(
1 600
T
1 200
800
Transition frequency f
400
0
1 10 100
2
fT I
E
VCB = −10 V
f = 200 MHz
= 25°C
T
a
Emitter current IE (mA
SJC00026BED
Cob V
2.4
(pF)
ob
2.0
C
1.6
1.2
0.8
0.4
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
)
Collector-base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
)
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