Panasonic 2SA1674 Datasheet
Transistor
2SA1674
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC4391
Features
■
●
Low collector to emitter saturation voltage V
●
High collector to emitter voltage V
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25˚C)
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
–80
–80
–5
–1.5
–1
150
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1.2±0.1
+
0.1
0.45
–
0.05
1.05
±0.05 (1.45)
0.21.01.0
–0.05
+0.1
321
0.45
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.65
max.
Unit: mm
2.5±0.1
0.5
4.5±0.114.5±0.5
2.5±0.1
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
120 ~ 240 170 ~ 340
Conditions
VCB = –40V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –100mA
VCE = –2V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–80
–80
–5
120
60
typ
– 0.2
– 0.85
120
15
*2
Pulse measurement
max
– 0.1
340
– 0.3
–1.2
30
Unit
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SA1674
PC—Ta IC—V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=10
Ta=–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
25˚C
75˚C
Collector current IC (A
)
CE
)
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
Collector to emitter saturation voltage V
)
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
)
(
A
– 0.8
C
– 0.6
– 0.4
–1.2
–1.0
IB=–8mA
–7mA
Ta=25˚C
–6mA
–5mA
–4mA
–3mA
–2mA
Collector current I
– 0.2
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
500
450
FE
400
350
300
Ta=75˚C
250
200
150
100
Forward current transfer ratio h
50
0
– 0.01
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–1mA
C
VCE=–2V
)
V
CE(sat)—IC
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.01
0
– 0.1 –1 –10
– 0.03
Collector current IC (A
1 3 10 30 100
Emitter current IE (mA
– 0.3 –3
fT—I
E
)
VCB=–10V
Ta=25˚C
)
Cob—V
60
)
pF
(
50
ob
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
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