Panasonic 2SA1619A, 2SA1619 Datasheet
Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
Features
■
●
Complementary pair with 2SC4208 and 2SC4208A.
●
Allowing supply with the radial taping and automatic insertion
possible.
5.0±0.2
Unit: mm
4.0±0.2
8.0±0.2
0.7±0.2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SA1619
2SA1619A
2SA1619
2SA1619A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
2SA1619
2SA1619A
2SA1619
2SA1619A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Ratings
–30
–60
–25
–50
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
1.27
123
2.54±0.15
min
–30
–60
–25
–50
–5
85
40
0.7±0.1
0.45
1.27
+0.15
–0.1
2.3±0.2
typ
160
– 0.35
–1.1
200
6
13.5±0.5
0.45
+0.15
–0.1
1:Emitter
2:Collector
3:Base
TO–92NL Package
max
Unit
– 0.1
340
– 0.6
–1.5
MHz
15
µA
V
V
V
V
V
pF
*
h
Rank classification
FE1
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
1
Transistor 2SA1619, 2SA1619A
PC—Ta IC—V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
IC/IB=10
)
CE
–800
–700
)
–600
A
(
C
–500
–400
–300
–200
Collector current I
–100
IB=–10mA
0
0 –20–16–4 –12–8
–9mA
–8mA
–7mA
–6mA
–5mA
Ta=25˚C
–4mA
–3mA
–2mA
–1mA
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Ta=–25˚C
75˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=10
25˚C
)
–800
–700
)
–600
mA
(
C
–500
–400
–300
–200
Collector current I
–100
0
0 –10–8–2 –6–4
)
Forward current transfer ratio h
Base current IB (mA
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
0
– 0.01
– 0.03
– 0.1 –1 –10
Collector current IC (A
IC—I
hFE—I
– 0.3 –3
B
C
VCE=–10V
Ta=25˚C
)
VCE=–10V
)
fT—I
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
1 3 10 30 100
Emitter current IE (mA
2
E
VCB=–10V
Ta=25˚C
)
)
pF
(
Cob—V
24
20
ob
16
12
8
4
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
IE=0
f=1MHz
Ta=25˚C
–120
)
V
(
–100
CER
–80
–60
–40
–20
Collector to emitter voltage V
0
1 10 100 10003 30 300
)
Base to emitter resistance RBE (kΩ
V
CER—RBE
IC=–2mA
Ta=25˚C
2SA1619A
2SA1619
)
Loading...