Panasonic 2SA1534, 2SA1534A Datasheet

Transistor

2SA1534, 2SA1534A

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification
Complementary to 2SC3940 and 2SC3940A

Features

■

●

Complementary pair with 2SC3940 and 2SC3940A.

●

Allowing supply with the radial taping and automatic insertion
possible.

5.0±0.2

Unit: mm

4.0±0.2

8.0±0.2

0.7±0.2

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SA1534
2SA1534A
2SA1534

2SA1534A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

2SA1534
2SA1534A
2SA1534
2SA1534A

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Ratings

–30
–60
–25
–50

–5

–1.5

–1

1

150

–55 ~ +150

Unit

V

V

V
A

A
W
˚C
˚C

Conditions

VCB = –20V, IE = 0

IC = –10µA, IE = 0

IC = –2mA, IB = 0

IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

1.27

123

2.54±0.15

min

–30
–60
–25
–50

–5
85
50

0.7±0.1

0.45

1.27

+0.15
–0.1

2.3±0.2

typ

– 0.2

– 0.85

200

20

13.5±0.5

0.45

+0.15
–0.1

1:Emitter
2:Collector
3:Base
TO–92NL Package

max

Unit

– 0.1

340

– 0.4
–1.2

MHz

30

µA

V

V

V

V
V

pF

*

h

Rank classification

FE1

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

1

Transistor

2SA1534, 2SA1534A

PC—Ta IC—V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

– 0.03

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10

– 0.3 –3

Collector current IC (A

)

IC/IB=10

)

CE

–1.5

–1.25

)
A

(

–1.0

C

– 0.75

– 0.5

Collector current I

– 0.25

0

0 –10–8–2 –6–4

Ta=25˚C

IB=–10mA

–9mA
–8mA
–7mA
–6mA
–5mA

–4mA
–3mA

–2mA

–1mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

–100

)
V

(

–30

BE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

– 0.01

Ta=–25˚C

75˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

IC/IB=10

25˚C

)

–1.2

VCE=–10V
Ta=25˚C

–1.0

)
A

(

– 0.8

C

– 0.6

– 0.4

Collector current I

– 0.2

0

0 –12–10–8–2 –6–4

)

Base current IB (mA

hFE—I

–600

FE

–500

–400

Ta=75˚C

–300

–200

–100

Forward current transfer ratio h

25˚C

–25˚C

0

– 0.01

– 0.1 –1 –10

– 0.03

Collector current IC (A

IC—I

B

– 0.3 –3

)

C

VCE=–10V

)

fT—I

200

VCB=–10V
Ta=25˚C

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

1 3 10 30 100

Emitter current IE (mA

2

E

50

)

45

pF

(

40

ob

35

30

25

20

15

10

5

Collector output capacitance C

0

–1 –3 –10 –30 –100

)

Collector to base voltage VCB (V

Cob—V

CB

IE=0
f=1MHz
Ta=25˚C

–120

)
V

(

–100

CER

–80

–60

–40

–20

Collector to emitter voltage V

)

Base to emitter resistance RBE (kΩ

V

CER—RBE

IC=–10mA
Ta=25˚C

2SA1534A

2SA1534

0

0.1 1 10 1000.3 3 30

)