Panasonic 2SA1533 Datasheet

Transistor

2SA1533

Silicon PNP epitaxial planer type

For low-frequency driver amplification
Complementary to 2SC3939

Features

■

●

High collector to emitter voltage V

●

Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

Cob

.

CEO

Ratings

– 0.5

–55 ~ +150

–80
–80

–5
–1

1

150

VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

Unit

V
V
V
A

A
W
˚C
˚C

Conditions

1.27

5.0±0.2

123

2.54±0.15

min

–80
–80

–5
90
50

0.7±0.2

0.7±0.1

0.45

1.27

+0.15
–0.1

2.3±0.2

typ

100

– 0.2

– 0.85

8.0±0.2

13.5±0.5

0.45

85
11

Unit: mm

4.0±0.2

+0.15
–0.1

1:Emitter
2:Collector
3:Base
TO–92NL Package

max

Unit

– 0.1

220

– 0.4
–1.2

MHz

20

µA

V
V
V

V
V

pF

*

h

Rank classification

FE1

Rank Q R

h

FE1

90 ~ 155 130 ~ 220

1

Transistor 2SA1533

PC—Ta IC—V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–10

V

(

–3

CE(sat)

–1

– 0.3

– 0.1

– 0.03

– 0.01

– 0.003

– 0.001

Collector to emitter saturation voltage V

–1 –10 –100 –1000–3 –30 –300

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

IC/IB=10

)

CE

–1.2

–1.0

)

A

(

– 0.8

C

– 0.6

– 0.4

Collector current I

– 0.2

0

0 –10–8–2 –6–4

IB=–10mA

Ta=25˚C

–9mA
–8mA

–7mA
–6mA

–5mA
–4mA
–3mA

–2mA

–1mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

–100

)

V

(

–30

BE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

–1 –10 –100 –1000–3 –30 –300

Ta=–25˚C

IC/IB=10

25˚C

75˚C

Collector current IC (mA

IC—I

B

–1.2

VCE=–10V
Ta=25˚C

–1.0

)
A

(

– 0.8

C

– 0.6

– 0.4

Collector current I

– 0.2

0

0 –10–8–2 –6–4

)

Base current IB (mA

hFE—I

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

–1 –10 –100 –1000–3 –30 –300

)

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

C

VCE=–10V

)

fT—I

120

)

100

MHz

(

T

80

60

40

20

Transition frequency f

0

1 10 100 10003 30 300

Emitter current IE (mA

2

E

VCB=–10V
f=200MHz
Ta=25˚C

)

Cob—V

60

)

pF

(

50

ob

40

30

20

10

CB

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

I

—Ta

CBO

4

10

VCB=–20V

3

10

)

)
Ta

(

2

10

Ta=25˚C

(

CBO

I

CBO

I

10

1

0 18060 120

)

Ambient temperature Ta (˚C

)