Panasonic 2SA1532 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1532

Silicon PNP epitaxial planar type

For low-frequency amplification

Complementary to 2SC3930

+0.1

0.3

–0.0

0.15

Unit: mm

+0.10
–0.05

■ Features

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

T

132

(0.65)

(0.65)

1.3±0.1

2.0±0.2

10°

CBO

CEO

EBO

C

C

j

stg

−30 V

−20 V

−5V

−30 mA

150 mW

150 °C

−55 to +150 °C

Marking Symbol: E

2.1±0.1

1.25±0.10 (0.425)

5°

+0.2

–0.1

0.9

0.9±0.10 to 0.1

SMini3-G1 Package

0.2±0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Base-emitter saturation voltage V

Collector-base cutoff current (Emitter open)

I

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB

Reverse transfer impedance Z

Common-emitter reverse transfer capacitance

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank A B C

h

FE

50 to 100 70 to 140 110 to 220

VCE = −10 µA, IC = −1 mA − 0.7 V

BE

VCB = −10 V, IE = 0 − 0.1 µA

CBO

I

VCE = −20 V, IB = 0 −100 µA

CEO

I

VEB = −5 V, IC = 0 −10 µA

EBO

h

VCB = −10 V, IE = 1 mA 50 220 

FE

CE(sat)IC

C

= −10 mA, IB = −1 mA − 0.1 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz

T

VCB = −10 V, IE = 1 mA, f = 2 MHz 22 60 Ω

rb

VCB = −10 V, IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF

re

Publication date: January 2003 SJC00021BED

1

2SA1532

This product complies with the RoHS Directive (EU 2002/95/EC).

200

180

)

mW

160

(

C

140

120

100

80

60

40

Collector power dissipation P

20

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

hFE  I

120

100

PC  T

FE

80

60

40

Ta = 75°C

25°C

−25°C

a

C

VCE = −10 V

IC  V

−30

−25

CE

Ta = 25°C

)

mA

(

−20

C

−15

−10

Collector current I

−5

0

0 −10−8−2 −6−4

)

Collector-emitter voltage VCE (V

Cob  V

6

(pF)

ob

5

C

4

3

2

IB = −250 µA

−200 µA

−150 µA

−100 µA

CB

f = 1 MHz

= 0

I

E

= 25°C

T

a

−50 µA

)

−100

)

V

(

CE(sat)

−10

−1

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.1 −1 −10 −100

)

5

pF
(

re

4

3

2

V

 I

CE(sat)

C

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector current IC (mA

Cre  V

CE

IC = −1 mA
f = 10.7 MHz

= 25°C

T

a

)

Forward current transfer ratio h

20

0

− 0.1 −1 −10 −100

Collector current IC (mA

fT  I

600

500

)

MHz
(

400

T

300

200

Transition frequency f

100

0

0.1 1 10 100

E

VCB = −10 V

= 25°C

T

a

Emitter current IE (mA

1

Collector output capacitance

(Common base, input open circuited)

0

)

)

− 0.1 −1 −10 −100

Collector-base voltage VCB (V

GP  I

24

20

)

16

dB

(

P

12

8

Power gain G

4

0

− 0.1 −1 −10 −100

C

VCE = −10 V
f = 100 MHz

= 25°C

T

a

Collector current IC (mA

)

)

1

Common emitter reverse transfer capacitance C

0

−1 −10 −100

VCB = −10 V
f = 100 MHz

= 25°C

T

a

)

Collector-emitter voltage VCE (V

NF  I

5

4

E

)

dB

(

3

2

Noise figure NF

1

0

0.1 1 10

Emitter current IE (mA

)

2

SJC00021BED