Panasonic 2SA1512 Datasheet
Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC1788
Features
■
●
Low collector to emitter saturation voltage V
●
Optimum for low-voltage operation and for converters.
●
Allowing supply with the radial taping.
●
Optimum for high-density mounting.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
–25
–20
–7
–1
– 0.5
300
150
–55 ~ +150
Unit: mm
4.0±0.2
+0.2
0.1
–
0.45
3.0±0.215.6±0.5
0.7±0.1
2.0±0.2
.
marking
Unit
123
V
V
V
1.271.27
2.54±0.15
A
A
mW
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
˚C
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
Conditions
VCB = –25V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*1
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
*2
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–25
–20
–7
90
25
typ
max
–100
–1
220
– 0.4
–1.2
150
15
25
*2
Pulse measurement
Unit
nA
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SA1512
PC—Ta IC—V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.03
Ta=–25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
IC/IB=10
25˚C
75˚C
)
CE
)
–1.2
Ta=25˚C
–1.0
)
mA
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE—I
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
C
IB=–10µA
–9µA
–8µA
–7µA
–6µA
–5µA
–4µA
–3µA
–2µA
–1µA
VCE=–2V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
V
CE(sat)—IC
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT—I
E
VCB=–10V
Ta=25˚C
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
IC/IB=10
)
)
Cob—V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
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