Panasonic 2SA1323 Datasheet

Transistor

2SA1323

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC3314

Features

■

●

Allowing supply with the radial taping.

●

High transition frequency fT.

●

Optimum for high-density mounting.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitanse

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

V

CE(sat)

V

BE

f

T

NF
Z

rb

C

re

Ratings

–30
–20

–5
–60
–30
300
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

Conditions

VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA, f = 10.7MHz

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

min

1.271.27

typ

0.1

+0.2

–

0.45

2.54±0.15

0.7±0.1

max

– 0.1
–100

–10

70

220
– 0.1
– 0.7

150

300

2.8
22

1.2

4.0
50

2.0

Unit: mm

2.0±0.2

Unit

µA
µA
µA

V
V

MHz

dB

Ω

pF

*

hFE Rank classification

Rank B C

h

FE

70 ~ 140 110 ~ 220

1

Transistor 2SA1323

PC—Ta IC—V

500

)

450

mW

(

400

C

350

300

250

200

150

100

Collector power dissipation P

50

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

Ta=75˚C

25˚C

Collector current IC (mA

)

IC/IB=10

–25˚C

)

CE

–24

–20

)
mA

(

–16

C

–12

–8

Collector current I

–4

0

0 –12–10–8–2 –6–4

IB=–250µA

Collector to emitter voltage VCE (V

hFE—I

C

–120

FE

–100

–80

–60

–40

–20

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Ta=75˚C

25˚C

–25˚C

VCE=–10V

Collector current IC (mA

Ta=25˚C

–200µA

–150µA

–100µA

–50µA

)

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

0.1 1 10 1000.3 3 30

IC—V

BE

VCE=–10V

25˚C

Ta=75˚C

–25˚C

fT—I

E

Ta=25˚C
V

CB

Emitter current IE (mA

)

=–10V

)

Cob—V

5

)
pF

(

4

ob

3

2

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

2

CB

f=1MHz

=0

I

E

Ta=25˚C

Cre—V

)

6

pF

(

re

5

4

3

2

1

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)
dB

(

Power gain PG

)

PG — I

C

24

20

16

12

8

4

0

– 0.1 –1 –10 –100– 0.3 –3 –30

VCE=–10V
f=100MHz
Ta=25˚C

Collector current IC (mA

)