Panasonic 2SA1310 Datasheet
Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
Features
■
●
Allowing supply with the radial taping.
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
Optimum for high-density mounting.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–55
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
1.271.27
0.1
+0.2
–
0.45
2.54±0.15
0.7±0.1
Unit: mm
2.0±0.2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE
f
T
NV
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
*
VCE = –5V, IC = –2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –30mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
–60
–55
–7
180
typ
200
max
– 0.1
–1
700
– 0.6
–1
150
Unit
µA
µA
V
V
V
V
V
MHz
mV
1
Transistor
2SA1310
PC—Ta IC—V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
Collector current IC (mA
)
IC/IB=10
–25˚C
)
CE
–100
–90
–80
)
mA
(
–70
C
–60
–50
–40
–30
Collector current I
–20
–10
0
0 –12–10–8–2 –6–4
IB=–200µA
Collector to emitter voltage VCE (V
hFE—I
C
600
FE
500
Ta=75˚C
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
Ta=25˚C
–180µA
–160µA
–140µA
–120µA
–100µA
–80µA
–60µA
–40µA
–20µA
)
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
0.1 1 10 1000.3 3 30
IC—V
BE
VCE=–5V
25˚C
Ta=75˚C
–25˚C
fT—I
E
VCB=–5V
Ta=25˚C
Emitter current IE (mA
)
)
Cob—V
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
120
100
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
VCE=–10V
G
Function=FLAT
Rg=100kΩ
=80dB
V
22kΩ
5kΩ
Collector current IC (mA
)
Loading...