Panasonic 2SA1309A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1309A

Silicon PNP epitaxial planar type

For low-frequency amplification

Complementary to 2SC3311A

■ Features

• High forward current transfer ratio h

• Allowing supply with the radial taping

• Optimum for high-density mounting

FE

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−60 V

−50 V

−7V

−100 mA

−200 mA

300 mW

150 °C

0.75 max.

+0.20

0.45

–0.10

4.0±0.2

±0.5

15.6

(2.5) (2.5)

231

(0.8)(0.8)

±0.2

2.0

±0.2

3.0

7.6

Unit: mm

+0.20

0.45

–0.10

0.7

±0.1

1: Emitter
2: Collector
3: Base

NS-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No rank

h

FE

Publication date: March 2003 SJC00016BED

160 to 260 210 to 340 290 to 460 160 to 460

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

ob

= −10 µA, IE = 0 −60 V

= −2 mA, IB = 0 −50 V

= −10 µA, IC = 0 −7V

VCB = −10 V, IE = 0 −100 nA

VCE = −10 V, IB = 0 −1 µA

VCE = −10 V, IC = −2 mA 160 460 

= −50 mA, IB = −5 mA − 0.3 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF

1

2SA1309A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

500

a

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

Collector-emitter saturation voltage V

− 0.001

−1 −10 −100

CE(sat)

Ta = 75°C

25°C

−25°C

C

IC / IB = 10

Collector current IC (mA

IC  V

hFE  I

CE

Ta = 25°C

IB = −300 µA

C

VCE = −5 V

−250 µA

−200 µA

−150 µA

−100 µA

−50 µA

)

)

−1 000

−240

−200

)

mA
(

−160

C

−120

−80

Collector current I

−40

0

0 −2.0−1.6− 0.4 −1.2− 0.8

160

VCB = −10 V
T

140

)

120

MHz
(

T

100

80

60

40

Transition frequency f

20

0

− 0.1 −1 −10 −100

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

)

−1 000

)

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

600

500

FE

400

Ta = 75°C

300

25°C

−25°C

200

Forward current transfer ratio h

100

0

−1 −10 −100

Collector current IC (mA

IC  V

BE

VCE = −5 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

= 25°C

a

Emitter current IE (mA

)

)

10

Cob  V

(pF)

ob

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)

2

SJC00016BED