Page 1
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
■ Features
• High forward current transfer ratio h
• Allowing supply with the radial taping
• Optimum for high-density mounting
FE
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
−60 V
−50 V
−7V
−100 mA
−200 mA
300 mW
150 °C
0.75 max.
+0.20
0.45
–0.10
4.0±0.2
±0.5
15.6
(2.5) (2.5)
231
(0.8)(0.8)
±0.2
2.0
±0.2
3.0
7.6
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S No rank
h
FE
Publication date: March 2003 SJC00016BED
160 to 260 210 to 340 290 to 460 160 to 460
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
h
FE
CE(sat)IC
T
ob
= −10 µA, IE = 0 −60 V
= −2 mA, IB = 0 −50 V
= −10 µA, IC = 0 −7V
VCB = −10 V, IE = 0 −100 nA
VCE = −10 V, IB = 0 −1 µA
VCE = −10 V, IC = −2 mA 160 460
= −50 mA, IB = −5 mA − 0.3 V
VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF
1
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2SA1309A
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
500
a
)
mW
400
(
C
300
200
100
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
−10
)
V
(
CE(sat)
−1
− 0.1
− 0.01
Collector-emitter saturation voltage V
− 0.001
−1 −10 −100
CE(sat)
Ta = 75°C
25°C
−25°C
C
IC / IB = 10
Collector current IC (mA
IC V
hFE I
CE
Ta = 25°C
IB = −300 µA
C
VCE = −5 V
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
)
)
−1 000
−240
−200
)
mA
(
−160
C
−120
−80
Collector current I
−40
0
0 −2.0−1.6− 0.4 −1.2− 0.8
160
VCB = −10 V
T
140
)
120
MHz
(
T
100
80
60
40
Transition frequency f
20
0
− 0.1 −1 −10 −100
−120
−100
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
)
−1 000
)
0 −12−10−8−2 −6−4
Collector-emitter voltage VCE (V
600
500
FE
400
Ta = 75°C
300
25°C
−25°C
200
Forward current transfer ratio h
100
0
−1 −10 −100
Collector current IC (mA
IC V
BE
VCE = −5 V
25°C
Ta = 75°C
−25°C
Base-emitter voltage VBE (V
fT I
E
= 25°C
a
Emitter current IE (mA
)
)
10
Cob V
(pF)
ob
C
8
6
4
2
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
Collector-base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
)
2
SJC00016BED
Page 3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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