Panasonic 2SA1254 Datasheet

Transistor

2SA1254

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC2206

Features

■

●

High transition frequency fT.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

f

T

V

CE(sat)

V

BE

NF
Z

rb

C

re

Ratings

–30
–20

–5
–60
–30
400
150

–55 ~ +150

.

CE(sat)

VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA, f = 10.7MHz

Unit

V
V

V
mA
mA

mW

˚C
˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

min

typ

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

max

– 0.1
–100

–10

70

150

300

220

– 0.1
– 0.7

2.8
22

1.2

4.0
50

2.0

Unit: mm

1.0

4.1±0.2 4.5±0.1

Unit

µA
µA
µA

MHz

V
V

dB

Ω

pF

*

hFE Rank classification

Rank B C

h

FE

70 ~ 140 110 ~ 220

1

Transistor

2SA1254

PC—Ta IC—V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE—I

C

–120

FE

–100

–80

–60

–40

Ta=75˚C

25˚C

–25˚C

VCE=–10V

CE

)

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

Cob—V

6

)
pF

(

5

ob

4

3

2

CB

Ta=25˚C

IB=–250µA

–200µA

–150µA

–100µA

–50µA

f=1MHz
I

=0

E

Ta=25˚C

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

)

)
pF

(

re

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Cre—V

5

4

3

2

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)

–20

Forward current transfer ratio h

0
– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

fT—I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

0.1 1 10 1000.3 3 30

VCB=–10V
Ta=25˚C

Emitter current IE (mA

1

1

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector to base voltage VCB (V

PG—I

C

24

20

VCE=–10V
f=100MHz
Ta=25˚C

)
dB

(

16

12

8

Power gain PG

4

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector current IC (mA

)

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

NF — I

E

5

4

)
dB

(

3

2

Noise figure NF

1

0

0.1 0.3 1 3 10

VCB=–10V
f=100MHz
Ta=25˚C

Emitter current IE (mA

)

)

2