Panasonic 2SA1128 Datasheet
Transistor
2SA1128
Silicon PNP epitaxial planer type
For low-frequency output amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Optimum for low-voltage operation and for converter circuits.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Rank Q R
h
FE1
Note) S Rank V
90 ~ 155 130 ~ 220
≥ 18V.
CEO
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
.
CE(sat)
VCB = –25V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
A
A
mW
˚C
˚C
Conditions
*2
Unit: mm
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
–25
–20
–7
*2
90
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
–100
–1
220
Unit
nA
µA
V
V
V
25
*2
*2
– 0.4
–1.2
150
15
25
*2
Pulse measurement
V
V
MHz
pF
1
Transistor
2SA1128
PC—Ta IC—V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
BE(sat)—IC
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.03
Ta=–25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
IC/IB=10
25˚C
75˚C
)
CE
)
–1.2
)
A
(
–1.0
– 0.8
C
– 0.6
– 0.4
Ta=25˚C
IB=–10µA
–9µA
–8µA
–7µA
–6µA
–5µA
–4µA
–3µA
–2µA
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE—I
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
–1µA
C
VCE=–2V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
V
CE(sat)—IC
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
fT—I
E
VCB=–10V
Ta=25˚C
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
IC/IB=10
)
)
Cob—V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
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