Panasonic 2SA1127 Datasheet

Transistor

2SA1127

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification
Complementary to 2SC2634

Features

■

●

Low noise characteristics.

●

High foward current transfer ratio hFE.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency

Noise voltage

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

V

BE

f

T

NV

Ratings

–60
–55

–7
–200
–100

400
150

–55 ~ +150

VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –30mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

Unit

V
V

V
mA
mA

mW

˚C
˚C

Conditions

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

typ

–1

– 0.01
–60
–55

–7

180

200

+0.2

0.45

–0.1

1:Emitter

2.3±0.2

2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

max

–100

–1

700

– 0.6

–1

150

Unit: mm

Unit

nA
µA

V
V
V

V
V

MHz

mV

*

hFE Rank classification

Rank R S T

h

FE

180 ~ 360 260 ~ 520 360 ~ 700

1

Transistor

2SA1127

PC—Ta IC—V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

Ta=75˚C

Collector current IC (mA

)

IC/IB=10

–25˚C

)

CE

–80

–70

)

–60

mA

(

C

–50

–40

–30

–20

Collector current I

–10

0

0 –12–10–8–2 –6–4

IB=–200µA

Collector to emitter voltage VCE (V

hFE—I

C

600

FE

500

Ta=75˚C

400

300

200

100

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

–25˚C

VCE=–5V

Collector current IC (mA

Ta=25˚C

–180µA
–160µA

–140µA
–120µA

–100µA
–80µA

–60µA
–40µA

–20µA

)

–120

–100

)
mA

(

–80

C

–60

–40

Collector current I

–20

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

1 3 10 30 100

IC—V

BE

VCE=–5V

25˚C

Ta=75˚C

–25˚C

fT—I

E

VCB=–5V
Ta=25˚C

Emitter current IE (mA

)

)

Cob—V

10

)

9

pF

(

8

ob

7

6

5

4

3

2

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

NV — I

C

100

VCE=–10V

90

=80dB

G

V

Function=FLAT

80

70

60

50

40

30

20

10

0

– 0.01 – 0.03 – 0.1 – 0.3 –1

Rg=100kΩ

22kΩ

5kΩ

Collector current IC (mA

)