Panasonic 2SA1124 Datasheet

Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2 –0.1
1.271.27
0.45
+0.2 –0.1
132
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2632
Features
Satisfactory foward current transfer ratio hFE collector current I characteristics.
High collector to emitter voltage V
Small collector output capacitance Cob.
Makes up a complementary pair with 2SC2632, which is opti­mum for the pre-driver stage of a 40 to 60W output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–150 –150
–100
–55 ~ +150
–5
–50
150
Unit
V V
V mA mA
1
W ˚C ˚C
Unit: mm
C
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
Noise voltage
*
hFE Rank classification
Rank R S T
h
FE
130 ~ 220 185 ~ 330 260 ~ 450
Symbol
I
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
C
ob
NV
Conditions
VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCE = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100k, Function = FLAT
min
–150
–5
130
typ
200
150
max
–1
450
–1
5
300
Unit
µA
V V
V
MHz
pF
mV
1
Transistor 2SA1124
PC—Ta IC—V
1.2
) W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
CE
–80
–70
)
–60
mA
(
C
–50
–40
–30
–20
Collector current I
–10
0
0 –12–10–8–2 –6–4
IB=–500µA
Collector to emitter voltage VCE (V
hFE—I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
Ta=25˚C
–450µA –400µA –350µA –300µA
–250µA –200µA
–150µA
–100µA
–50µA
)
–120
–100
) mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
300
)
250
MHz
(
T
200
150
100
50
Transition frequency f
0
1 3 10 30 100
IC—V
BE
VCE=–5V
25˚C
Ta=75˚C
fT—I
–25˚C
E
VCB=–10V Ta=25˚C
Emitter current IE (mA
)
)
Cob—V
6
) pF
(
5
ob
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0 f=1MHz Ta=25˚C
)
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