Panasonic 2SA1123 Datasheet
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
Features
■
●
Satisfactory foward current transfer ratio hFE collector current I
characteristics.
●
High collector to emitter voltage V
●
Small collector output capacitance Cob.
●
Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–150
–150
–100
–55 ~ +150
–5
–50
750
150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
5.0±0.2 4.0±0.2
C
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
0.45
2.3±0.2
+0.2
–0.1
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
NV
Rank R S T
h
FE
130 ~ 220 185 ~ 330 260 ~ 450
Conditions
VCB = –100V, IE = 0
IC = –0.1mA, IB = 0
IE = –10µA, IC = 0
*
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
–150
–5
130
typ
200
150
max
–1
450
–1
5
300
Unit
µA
V
V
V
MHz
pF
mV
1
Transistor
2SA1123
PC—Ta IC—V
1.0
)
0.9
W
(
0.8
C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
–25˚C
Collector current IC (mA
)
IC/IB=10
)
CE
–80
–70
)
–60
mA
(
C
–50
–40
–30
–20
Collector current I
–10
0
0 –12–10–8–2 –6–4
IB=–500µA
Collector to emitter voltage VCE (V
hFE—I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
Ta=25˚C
–450µA
–400µA
–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
)
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
300
)
250
MHz
(
T
200
150
100
50
Transition frequency f
0
1 3 10 30 100
IC—V
BE
VCE=–5V
25˚C
Ta=75˚C
fT—I
–25˚C
E
VCB=–10V
Ta=25˚C
Emitter current IE (mA
)
)
Cob—V
6
)
pF
(
5
ob
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
Ta=25˚C
)
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