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Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
Features
■
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
Rank classification
FE1
Marking
Symbol
Rank R S T
Symbol
2SA1034
2SA1035
2SA1034
2SA1035
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Parameter
2SA1034
2SA1035
2SA1034
2SA1035
h
FE
2SA1034 FR FS FT
180 ~ 360 260 ~ 520 360 ~ 700
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
V
BE
f
T
NV
Ratings
–35
–55
–35
–55
–5
–100
–50
200
150
–55 ~ +150
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
2SA1035 HR HS HT
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : F
min
–35
–55
–35
–55
–5
180
*2
*2
(2SA1034)
(2SA1035)
H
typ
– 0.7
200
*2
Pulse measurement
max
–100
–1
700
– 0.6
–1.0
150
Unit: mm
Unit
nA
µA
V
V
V
V
V
MHz
mV
1
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Transistor
2SA1034, 2SA1035
PC—Ta IC—V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB—V
BE
–800
–700
–600
)
µA
(
–500
B
–400
VCE=–5V
Ta=25˚C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IC—V
–120
)
mA
(
–100
–80
C
–60
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
BE
VCE=–5V
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
)
)
–100
V
(
–30
CE(sat)
–10
0
0– 0.5– 0.4– 0.1 – 0.3– 0.2
–3
–1
IC—I
B
VCE=–5V
Ta=25˚C
Base current IB (mA
V
CE(sat)—IC
)
IC/IB=10
–300
Base current I
–200
–100
0
0 –1.0– 0.8– 0.2 – 0.6– 0.4
Base to emitter voltage VBE (V
hFE—I
C
600
FE
500
Ta=75˚C
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
)
Base to emitter voltage VBE (V
fT—I
E
500
450
)
400
MHz
(
350
T
300
250
200
150
100
Transition frequency f
50
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
VCB=–5V
Ta=25˚C
)
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
–0.1 –1 –10 –100–0.3 –3 –30
Collector current IC (mA
Cob—V
20
)
18
pF
(
16
ob
14
12
10
8
6
4
2
Collector output capacitance C
0
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
CB
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
Collector to base voltage VCB (V
)
2