Page 1
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
0.40
3
+0.10
–0.05
0.16
Unit: mm
+0.10
–0.06
■ Features
+0.25
–0.05
+0.2
• High frequency voltage f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
−30 V
−20 V
−5V
−30 mA
200 mW
150 °C
−55 to +150 °C
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Marking Symbol: E
–0.3
2.8
1.50
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
0 to 0.1
Mini3-G1 Package
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage V
Collector-base cutoff current (Emitter open)
I
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Transition frequency f
Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 dB
Reverse transfer impedance Z
Reverse transfer capacitance C
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank B C
h
FE
70 to 140 110 to 220
VCE = −10 V, IC = −1 mA − 0.7 V
BE
VCB = −10 V, IE = 0 − 0.1 µA
CBO
I
VCE = −20 V, IB = 0 −100 µA
CEO
I
VEB = −5 V, IC = 0 −10 µA
EBO
h
VCE = −10 V, IC = −1 mA 70 220
FE
CE(sat)IC
= −10 mA, IB = −1 mA − 0.1 V
VCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz
T
VCB = −10 V, IE = 1 mA, f = 2 MHz 22 Ω
rb
VCE = −10 V, IC = −1 mA, f = 10.7 MHz 1.2 pF
re
Publication date: February 2003 SJC00009BED
1
Page 2
2SA1022
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
240
)
200
mW
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
hFE I
120
100
FE
80
60
40
Ta = 75°C
25°C
−25°C
a
C
VCE = −10 V
IC V
−30
−25
)
mA
(
−20
C
−15
−10
Collector current I
−5
0
0 −10−8−2 −6−4
)
Collector-emitter voltage VCE (V
Cob V
6
(pF)
ob
5
C
4
3
2
CE
Ta = 25°C
IB = −250 µA
CB
IE = 0
f = 1 MHz
= 25°C
T
a
−200 µA
−150 µA
−100 µA
−50 µA
−100
)
V
(
CE(sat)
−10
−1
− 0.1
Collector-emitter saturation voltage V
− 0.01
− 0.1 −1 −10 −100
)
5
4
(pF)
re
C
3
2
V
I
CE(sat)
C
IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector current IC (mA
Cre V
CE
IC = −1 mA
f = 10.7 MHz
= 25°C
T
a
)
Forward current transfer ratio h
20
0
− 0.1 −1 −10 −100
Collector current IC (mA
fT I
600
500
)
MHz
(
400
T
300
200
Transition frequency f
100
0
0.1 1 10 100
E
VCB = −10 V
= 25°C
T
a
Emitter current IE (mA
1
Collector output capacitance
(Common base, input open circuited)
0
− 0.1 −1 −10 −100
VCE = −10 V
f = 100 MHz
= 25°C
T
a
)
)
)
)
Collector-base voltage VCB (V
GP I
24
20
)
16
dB
(
P
12
8
Power gain G
4
0
− 0.1 −1 −10 −100
C
Collector current IC (mA
1
(Common emitter)
Reverse transfer capacitance
0
−1 −10 −100
Collector-emitter voltage VCE (V
NF I
5
4
E
)
dB
(
3
2
Noise figure NF
1
0
0.1 1 10
Emitter current IE (mA
VCB = −10 V
f = 100 MHz
= 25°C
T
a
)
)
2
SJC00009BED
Page 3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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