Panasonic 2SA1022 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1022

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC2295

0.40

3

+0.10
–0.05

0.16

Unit: mm

+0.10
–0.06

■ Features

+0.25

–0.05

+0.2

• High frequency voltage f

T

• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

−30 V

−20 V

−5V

−30 mA

200 mW

150 °C

−55 to +150 °C

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: E

–0.3

2.8

1.50

(0.65)

+0.2

–0.1

+0.3

–0.1

1.1

1.1

0 to 0.1

Mini3-G1 Package

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Base-emitter voltage V

Collector-base cutoff current (Emitter open)

I

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 dB

Reverse transfer impedance Z

Reverse transfer capacitance C
(Common emitter)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank B C

h

FE

70 to 140 110 to 220

VCE = −10 V, IC = −1 mA − 0.7 V

BE

VCB = −10 V, IE = 0 − 0.1 µA

CBO

I

VCE = −20 V, IB = 0 −100 µA

CEO

I

VEB = −5 V, IC = 0 −10 µA

EBO

h

VCE = −10 V, IC = −1 mA 70 220 

FE

CE(sat)IC

= −10 mA, IB = −1 mA − 0.1 V

VCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz

T

VCB = −10 V, IE = 1 mA, f = 2 MHz 22 Ω

rb

VCE = −10 V, IC = −1 mA, f = 10.7 MHz 1.2 pF

re

Publication date: February 2003 SJC00009BED

1

2SA1022

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

hFE  I

120

100

FE

80

60

40

Ta = 75°C

25°C

−25°C

a

C

VCE = −10 V

IC  V

−30

−25

)

mA
(

−20

C

−15

−10

Collector current I

−5

0

0 −10−8−2 −6−4

)

Collector-emitter voltage VCE (V

Cob  V

6

(pF)

ob

5

C

4

3

2

CE

Ta = 25°C

IB = −250 µA

CB

IE = 0
f = 1 MHz

= 25°C

T

a

−200 µA

−150 µA

−100 µA

−50 µA

−100

)
V

(

CE(sat)

−10

−1

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.1 −1 −10 −100

)

5

4

(pF)

re

C

3

2

V

 I

CE(sat)

C

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector current IC (mA

Cre  V

CE

IC = −1 mA
f = 10.7 MHz

= 25°C

T

a

)

Forward current transfer ratio h

20

0

− 0.1 −1 −10 −100

Collector current IC (mA

fT  I

600

500

)

MHz
(

400

T

300

200

Transition frequency f

100

0

0.1 1 10 100

E

VCB = −10 V

= 25°C

T

a

Emitter current IE (mA

1

Collector output capacitance

(Common base, input open circuited)

0

− 0.1 −1 −10 −100

VCE = −10 V
f = 100 MHz

= 25°C

T

a

)

)

)

)

Collector-base voltage VCB (V

GP  I

24

20

)

16

dB

(

P

12

8

Power gain G

4

0

− 0.1 −1 −10 −100

C

Collector current IC (mA

1

(Common emitter)

Reverse transfer capacitance

0

−1 −10 −100

Collector-emitter voltage VCE (V

NF  I

5

4

E

)
dB

(

3

2

Noise figure NF

1

0

0.1 1 10

Emitter current IE (mA

VCB = −10 V
f = 100 MHz

= 25°C

T

a

)

)

2

SJC00009BED