Panasonic 2SA1022 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SA1022

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC2295

Features

■

●

High transition frequency fT.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

V

CE(sat)

V

BE

f

T

NF
Z

rb

C

re

Ratings

–30
–20

–5
–30
200
150

–55 ~ +150

VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA
f = 10.7MHz

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : E

min

70

150

typ

– 0.1
– 0.7

300

2.8
22

1.2

max

– 0.1
–100

–10
220

Unit: mm

Unit

µA
µA
µA

V
V

MHz

dB

Ω

pF

*

hFE Rank classification

Marking Symbol EB EC

Rank B C

h

FE

70 ~ 140 110 ~ 220

1

Transistor

2SA1022

PC—Ta IC—V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE—I

C

120

FE

100

80

60

40

Ta=75˚C

25˚C

–25˚C

VCE=–10V

CE

)

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

Cob—V

6

)
pF

(

5

ob

4

3

2

CB

Ta=25˚C

IB=–250µA

–200µA

–150µA

–100µA

–50µA

IE=0
f=1MHz
Ta=25˚C

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

)

)
pF

(

re

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Cre—V

5

4

3

2

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)

20

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

fT—I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

0.1 1 10 1000.3 3 30

VCB=–10V
Ta=25˚C

Emitter current IE (mA

1

1

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector to base voltage VCB (V

PG — I

C

24

20

VCE=–10V
f=100MHz
Ta=25˚C

)
dB

(

16

12

8

Power gain PG

4

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector current IC (mA

)

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

NF — I

E

5

4

)
dB

(

3

2

Noise figure NF

1

0

0.1 0.3 1 3 10

VCB=–10V
f=100MHz
Ta=25˚C

Emitter current IE (mA

)

)

2