Panasonic 2SA1018 User Manual
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings Ta = 25°C
0.7
±0.1
5.0
±0.2
±0.2
5.1
±0.2
0.7
±0.5
12.9
Unit: mm
4.0
±0.2
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
−250 V
−200 V
−5V
−70 mA
−100 mA
750 mW
150 °C
0.45
2.5
+0.15
–0.1
+0.6
–0.2
123
2.5
+0.6
–0.2
±0.2
2.3
+0.15
0.45
–0.1
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CEOIC
EBOIE
I
CEO
h
FE
CE(sat)IC
T
ob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
60 to 150 100 to 220
= −100 µA, IB = 0 −200 V
= −1 µA, IC = 0 −5V
VCE = −120 V, IB = 0 −1 µA
VCE = −10 V, IC = −5 mA 60 220
= −50 mA, IB = −5 mA −1.5 V
VCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHz
VCB = −10 V, IE =0, f = 1 MHz 10 pF
Publication date: January 2003 SJC00008BED
1
2SA1018
This product complies with the RoHS Directive (EU 2002/95/EC).
1 000
PC T
)
mW
800
(
C
600
400
200
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (°C
V
I
−100
)
V
(
CE(sat)
− 0.1
−10
−1
CE(sat)
25°C
a
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
hFE I
Ta = 75°C
25°C
−25°C
CE
Ta = 25°C
IB = −1.0 mA
C
VCE = −10 V
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−120
−100
)
mA
(
−80
C
−60
−40
Collector current I
−20
0
0 −2.0−1.6− 0.4 −1.2− 0.8
120
100
)
MHz
(
80
T
60
40
Transition frequency f
20
−100
−80
)
mA
(
C
−60
−40
Collector current I
−20
0
)
0 −12−10−8−2 −6−4
Collector-emitter voltage VCE (V
300
250
FE
200
150
100
Forward current transfer ratio h
50
IC V
BE
VCE = −10 V
25°C
Ta = 75°C
−25°C
Base-emitter voltage VBE (V
fT I
E
VCB = −10 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
− 0.01
− 0.1 −1 −10 −100
Collector current IC (mA
20
Cob V
(pF)
ob
C
16
12
8
4
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
CB
Collector-base voltage VCB (V
2
)
IE = 0
f = 1 MHz
= 25°C
T
a
0
− 0.1 −1 −10 −100
Collector current IC (mA
I
T
10 000
1 000
CEO
a
VCE = −120 V
)
0
0.1 1 10 100
Emitter current IE (mA
)
)
)
a
T
(
= 25°C
a
100
T
(
CEO
I
CEO
I
10
1
0 24020016040 12080
)
Ambient temperature Ta (°C
)
SJC00008BED
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