Panasonic 2SA0963, 2SA963 User Manual

2SA0963

Power Transistors

2SA0963 (2SA963)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC2209

■ Features

•Large collector power dissipation PC

•Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit
Collector-base voltage (Emitter open)	VCBO	−50	V
Collector-emitter voltage (Base open)	VCEO	−40	V
Emitter-base voltage (Collector open)	VEBO	−5	V
Collector current	IC	−1.5	A
Peak collector current	ICP	−3	A
Collector power dissipation *	PC	10	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−55 to +150	°C

Note) *: TC = 25°C

				Unit: mm
7.5–0.1+0.5				2.9±0.2
120°
		2.3±0.2 3.8±0.3	11.0±0.5	3.05±0.1
		1.9±0.1	1.0
			16.0±
0.75±0.1		0.5±0.1
			0.5±0.1	1.26±0.1
4.6±0.2
		2.3±0.2
				1: Emitter
1	2	3		2: Collector
				3: Base
			TO-126A-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage (Emitter open)	VCBO	IC = −1 mA, IE = 0	−50			V
Collector-emitter voltage (Base open)	VCEO	IC = −2 mA, IB = 0	−40			V
Collector-base cutoff current (Emitter open)	ICBO	VCB = −20 V, IE = 0			−1	µA
Collector-emitter cutoff current (Base open)	ICEO	VCE = −10 V, IB = 0			−100	µA
Emitter-base cutoff current (Collector open)	IEBO	VEB = −5 V, IC = 0			−10	µA
Forward current transfer ratio *	hFE	VCE = −5 V, IC = −1 A	80		220
Collector-emitter saturation voltage	VCE(sat)	IC = −1.5 A, IB = − 0.15 A			−1.0	V
Base-emitter saturation voltage	VBE(sat)	IC = −2 A, IB = − 0.2 A			−1.5	V
Transition frequency	fT	VCB = −5 V, IE = 0.5 A, f = 200 MHz		150		MHz
Collector output capacitance	Cob	VCB = −5 V, IE = 0, f = 1 MHz		70		pF
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank	Q	R
hFE	80 to 160	120 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003

SJD00006BED

1

2SA0963

PC Ta

IC VCE

12

−4.0

TC = 25°C

−3.5

IB = −40 mA

(W)

10

−35 mA

C

(A)

−3.0

−30 mA

P

−25 mA

dissipation

8

Icurrent

C

−2.5

−20 mA

6

−2.0

−15 mA

powerCollector

Collector

4

−1.5

−10 mA

− 1.0

−5 mA

2

− 0.5

0

0

−2

−4

−6

−8

−10

0

40

80

120

160

200

0

Ambient temperature

Ta (°C)

Collector-emitter voltage

VCE

(V)

VBE(sat) IC

hFE IC

(V)

−10

IC / IB = 10

1 000

VCE = −5 V

h

BE(sat)

FE

TC = 100°C

25°C

voltagesaturationemitter-BaseV

transfercurrentForwardratio

−1

TC = −25°C

100

−25°C

100°C

25°C

− 0.1

10

− 0.01

− 0.1

−1

1

− 0.1

−1

− 0.01

− 0.01

Collector current IC (A)

Collector current IC (A)

Cob VCB

VCER RBE

(pF)

−60

140

IE = 0

TC = 25°C

ob

f = 1 MHz

(V)

TC = 25°C

−50

C

120

CER

capacitanceoutputCollector circuited)openinputbase,(Common

voltageemitter-Collector E)andBbetween(Resistor

V

−40

100

80

−30

60

−20

40

−10

20

0

0

−1

−10

−100

0.001

0.01

0.1

1

10

Collector-base voltage

VCB (V)

Base-emitter resistance

RBE (kΩ)

				VCE(sat) IC
(V)		−10			IC / IB = 10
CE(sat)
V
voltage		−1
saturation				TC = 100°C
Collector-emitter	− 0.1		25°C	−25°C
− 0.01				− 0.1	−1
		− 0.01
			Collector current IC (A)
				fT IE
		240			VCB = −5 V
					f = 200 MHz
		200			TC = 25°C
(MHz)
		160
T
f
frequency		120
Transition		80
		40
		0
		0.01		0.1	1	10
			Emitter current IE (A)
				ICEO Ta
	1	000			VCE = −12 V

	°C)	100
(T
	=25
)
a
CEO	a
	(T
I	CEO	10
	I

1

0

20

40

60

80

100

120

Ambient temperature Ta (°C)

2	SJD00006BED