Panasonic 2SA0921 User Manual

2SA0921

Transistors

2SA0921 (2SA921)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification Complementary to 2SC1980

■ Features

•High collector-emitter voltage (Base open) VCEO

•Low noise voltage NV

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit
Collector-base voltage (Emitter open)	VCBO	−120	V
Collector-emitter voltage (Base open)	VCEO	−120	V
Emitter-base voltage (Collector open)	VEBO	−5	V
Collector current	IC	−20	mA
Peak collector current	ICP	−50	mA
Collector power dissipation	PC	250	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−55 to +150	°C

			Unit: mm
	5.0±0.2		4.0±0.2
		±0.2
		5.1
0.7±0.1		±0.2
		0.7
		±0.5
		12.9
0.45–0.1+0.15			0.45–0.1+0.15
2.5–0.2+0.6		2.5–0.2+0.6
1	2	3
		±0.2	1: Emitter
		2.3	2: Collector
			3: Base
			TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage (Emitter open)	VCBO	IC = −10 µA, IE = 0	−120			V
Collector-emitter voltage (Base open)	VCEO	IC = −1 mA, IB = 0	−120			V
Emitter-base voltage (Collector open)	VEBO	IE = −10 µA, IC = 0	−5			V
Collector-base cutoff current (Emitter open)	ICBO	VCB = −50 V, IE = 0			−100	nA
Collector-emitter cutoff current (Base open)	ICEO	VCE = −50 V, IB = 0			−1	µA
Forward current transfer ratio *	hFE	VCE = −5 V, IC = −2 mA	180		700
Collector-emitter saturation voltage	VCE(sat)	IC = −20 mA, IB = −2 mA			− 0.6	V
Transition frequency	fT	VCB = −5 V, IE = 2 mA, f = 200 MHz		200		MHz
Noise voltage	NV	VCE = −40 V, IC = −1 mA, GV = 80 dB			150	mV
		Rg = 100 kΩ, Function = FLAT

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank	R	S	T
hFE	180 to 360	260 to 520	360 to 700

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2003

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1

2SA0921

PC Ta

IC VCE

IC VBE

500

−24

Ta = 25°C

−60

VCE = −5 V

)

IB = −50 µA

mW

−20

−50

25°C

400

−45

µA

(

)

)

C

mA

−40 µA

mA

P

−16

−40

Ta = 75°C

−25°C

Collector power dissipation

(

−35

µA

(

C

C

300

Collector current I

−30 µA

Collector current I

−12

−25

µA

−30

200

−20 µA

−8

−15

µA

−20

100

−10 µA

−4

−10

−5 µA

0

40

80

120

160

200

0

−2 −4 −6

−8

−10

−12

0

− 0.4

− 0.8

−1.2

−1.6

−2.0

0

0

0

Ambient temperature T

a

(°C)

Collector-emitter voltage

V

(V)

Base-emitter voltage

V

BE

(V)

CE

VCE(sat) IC

hFE IC

fT IE

)

−100

1 000

320

V

IC

/ IB = 10

VCE = −5 V

VCB = −5 V

(

CE(sat)

280

Ta = 25°C

FE

800

)

V

−10

h

MHz

240

Collector to emitter saturationvoltage

Forward current transferratio

(

T

200

600

Transition frequency f

−1

Ta = 75°C

160

400

25°C

25°C Ta = 75°C

120

−25°C

− 0.1

−25°C

200

80

40

− 0.01

−1

−10

−100

0

−1

−10

−100

0

1

10

100

− 0.1

− 0.1

0.1

Collector current IC (mA)

Collector current

IC (mA)

Emitter current IE (mA)

Cob VCB

NV IC

(pF)

10

120

IE = 0

VCE = −10 V

9

f = 1 MHz

GV = 80 dB

ob

Ta

= 25°C

Function = FLAT

C

8

100

Collector output capacitance (Common base, input open circuited)

)

7

mV

80

Rg = 100 kΩ

(

6

Noise voltage NV

5

60

4

22 kΩ

3

40

4.7 kΩ

2

20

1

0

0

−10

−100

− 0.1

−1

−1

− 0.01

Collector-base voltage VCB (V)

Collector current

IC (mA)

2

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