Panasonic 2SA0921 User Manual

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Transistors

2SA0921 (2SA921)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Complementary to 2SC1980

■ Features

• High collector-emitter voltage (Base open) V

• Low noise voltage NV

CEO

0.7

±0.1

5.0

±0.2

±0.2

5.1

±0.2

0.7

±0.5

12.9

Unit: mm

4.0

±0.2

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−120 V

−120 V

−5V

−20 mA

−50 mA

250 mW

150 °C

0.45

2.5

+0.15
–0.1

+0.6
–0.2

123

2.5

+0.6
–0.2

±0.2

2.3

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

T

Noise voltage NV VCE = −40 V, IC = −1 mA, GV = 80 dB 150 mV

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

180 to 360 260 to 520 360 to 700

= −10 µA, IE = 0 −120 V

= −1 mA, IB = 0 −120 V

= −10 µA, IC = 0 −5V

VCB = −50 V, IE = 0 −100 nA

VCE = −50 V, IB = 0 −1 µA

VCE = −5 V, IC = −2 mA 180 700 

= −20 mA, IB = −2 mA − 0.6 V

VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz

Rg = 100 kΩ, Function = FLAT

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2003 SJC00007BED

1

2SA0921

500

PC  T

)

mW

400

(

C

300

200

100

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (°C

V

 I

)

−100

V
(

CE(sat)

− 0.1

−10

−1

CE(sat)

25°C

Ta = 75°C

−25°C

a

C

IC / IB = 10

IC  V

hFE  I

25°C

−25°C

CE

IB = −50 µA

C

Ta = 25°C

−45 µA

−40 µA

−35 µA

−30 µA

−25 µA

−20 µA

−15 µA

−10 µA

−5 µA

VCE = −5 V

)

−60

−50

)

mA
(

−40

C

−30

−20

Collector current I

−10

0

0 −2.0−1.6− 0.4 −1.2− 0.8

320

280

)

240

MHz
(

T

200

160

120

80

Transition frequency f

40

−24

−20

)

mA
(

−16

C

−12

−8

Collector current I

−4

0

)

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

1 000

FE

800

600

Ta = 75°C

400

200

Forward current transfer ratio h

IC  V

BE

VCE = −5 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = −5 V

= 25°C

T

a

)

− 0.01

Collector to emitter saturation voltage V

− 0.1 −1 −10 −100

Collector current IC (mA

10

Cob  V

(pF)

9

ob

C

8

7

6

5

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

IE = 0
f = 1 MHz
T

Collector-base voltage VCB (V

2

= 25°C

a

0

− 0.1 −1 −10 −100

)

Collector current IC (mA

NV  I

120

VCE = −10 V

= 80 dB

G

V

Function = FLAT

100

)

mV

80

(

60

40

Noise voltage NV

20

0

)

− 0.01 − 0.1 −1

Collector current IC (mA

Rg = 100 kΩ

)

C

22 kΩ

4.7 kΩ

)

0

0.1 1 10 100

Emitter current IE (mA

)

SJC00007BED