Panasonic 2SA08885 User Manual
查询2SA0885供应商
Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
■ Features
• Output of 3 W can be obtained by a complementary pair with
2SC1846
• TO-126B package which requires no insulation plate for installation to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation
CBO
CEO
EBO
CP
P
C
C
Junction temperature T
Storage temperature T
stg
Note)*: With a 100 × 100 × 2 mm Al heat sink
j
−45 V
−35 V
−5V
−1A
−1.5 A
1.2 W
*
5.0
150 °C
−55 to +150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
±0.2
±0.1
3.05
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
FE1
h
FE2
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S
h
FE1
Publication date: February 2003 SJD00002BED
85 to 170 120 to 240 170 to 340
= −10 µA, IE = 0 −45 V
= −2 mA, IB = 0 −35 V
VCB = −20 V, IE = 0 − 0.1 µA
VCE = −20 V, IB = 0 −100 µA
VEB = −5 V, IC = 0 −10 µA
*
VCE = −10 V, IC = −500 mA 85 340
VCE = −5 V, IC = −1 A 50
= −500 mA, IB = −50 mA − 0.5 V
VCE = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
T
VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
ob
Note) The part number in the parenthesis shows conventional part number.
1
2SA0885
6
5
(W)
C
4
3
2
1
Collector power dissipation P
0
0 20040 80 160120
–10
(V)
CE(sat)
–1
–0.1
(1)With a 100 × 100 × 2 mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature Ta (°C)
V
I
CE(sat)
TC=100˚C
25˚C
PC T
a
−1.50
−1.25
(A)
−1.00
C
−0.75
−0.50
Collector current I
−0.25
0
0 −10−2 −4 −8−6
IC V
–8mA
–7mA
CE
–9mA
TC=25˚C
IB=–10mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–1.2
VCE=–10V
T
–1.0
(A)
–0.8
C
–0.6
–0.4
Collector current I
–0.2
0
0–12–2 –10–4 –8–6
Collector-emitter voltage VCE (V)
V
C
–25˚C
IC/IB=10
–10
(V)
BE(sat)
–1
–0.1
BE(sat)
TC=–25˚C
100˚C
25˚C
I
C
IC/IB=10
000
1
FE
100
10
IC I
=25˚C
C
Base current IB (mA)
hFE I
TC=100˚C
–25˚C
B
C
VCE=–10V
25˚C
Collector-emitter saturation voltage V
–0.01
–0.01
–0.1 –1
Collector current IC (A)
fT I
200
VCB=–10V
f=200MHz
T
=25˚C
C
160
(MHz)
T
120
80
40
Transition frequency f
0
1 10 100
E
Emitter current IE (mA)
Base-emitter saturation voltage V
–0.01
–0.01 –0.1 –1
Collector current IC (A)
Cob V
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
–1 –10 –100
CB
Collector-base voltage VCB (V)
IE=0
f=1MHz
T
=25˚C
C
Forward current transfer ratio h
1
–0.01 –0.1 –1
Collector current IC (A)
V
R
–100
(V)
–80
CER
V
–60
–40
–20
Collector-emitter voltage
(Resistor between B and E)
0
0.1 1 10 100
CER
Base-emitter resistance RBE (kΩ)
BE
IC=–10mA
T
=25˚C
C
2
SJD00002BED
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