Panasonic 2SA08885 User Manual

2SA0885

Power Transistors

2SA0885 (2SA885)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC1846

■ Features

•Output of 3 W can be obtained by a complementary pair with 2SC1846

•TO-126B package which requires no insulation plate for installation to the heat sink

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit
Collector-base voltage (Emitter open)	VCBO	−45	V
Collector-emitter voltage (Base open)	VCEO	−35	V
Emitter-base voltage (Collector open)	VEBO	−5	V
Collector current	IC	−1	A
Peak collector current	ICP	−1.5	A
Collector power dissipation	PC	1.2	W
		5.0 *
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−55 to +150	°C

Note) *: With a 100 × 100 × 2 mm Al heat sink

				Unit: mm
8.0–0.1+0.5				3.2±0.2
φ 3.16±0.1
		3.8±0.3	11.0±0.5	3.05±0.1
		1.9±0.1	1.0
			16.0±
0.75±0.1		0.5±0.1
4.6±0.2			0.5±0.1	1.76±0.1
		2.3±0.2
				1: Emitter
1	2	3		2: Collector
				3: Base
			TO-126B-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage (Emitter open)	VCBO	IC = −10 µA, IE = 0	−45			V
Collector-emitter voltage (Base open)	VCEO	IC = −2 mA, IB = 0	−35			V
Collector-base cutoff current (Emitter open)	ICBO	VCB = −20 V, IE = 0			− 0.1	µA
Collector-emitter cutoff current (Base open)	ICEO	VCE = −20 V, IB = 0			−100	µA
Emitter-base cutoff current (Collector open)	IEBO	VEB = −5 V, IC = 0			−10	µA
Forward current transfer ratio	*	VCE = −10 V, IC = −500 mA	85		340
	hFE1
	hFE2	VCE = −5 V, IC = −1 A	50
Collector-emitter saturation voltage	VCE(sat)	IC = −500 mA, IB = −50 mA			− 0.5	V
Transition frequency	fT	VCE = −10 V, IE = 50 mA, f = 200 MHz		200		MHz
Collector output capacitance	Cob	VCB = −10 V, IE = 0, f = 1 MHz		20	30	pF
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank	Q	R	S
hFE1	85 to 170	120 to 240	170 to 340

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003

SJD00002BED

1

2SA0885

PC Ta

IC VCE

IC IB

6

(1)With a 100

× 100 × 2 mm

−1.50

TC=25˚C

–1.2

VCE=–10V

Al heat sink

TC=25˚C

(W)

(2)Without heat sink

5

−1.25

–1.0

–9mA

IB=–10mA

C

(A)

P

–8mA

(A)

4

−1.00

–7mA

–0.8

Collector power dissipation

C

(1)

C

Collector current I

Collector current I

–6mA

3

−0.75

–0.6

–5mA

2

−0.50

–4mA

–0.4

–3mA

1

(2)

−0.25

–2mA

–0.2

–1mA

0

0

−2

−4

−6

−8

−10

0

0

40

80

120

160

200

0

0

–2

–4

–6

–8

–10

–12

Ambient temperature Ta (°C)

Collector-emitter voltage

VCE (V)

Base current IB (mA)

VCE(sat) IC

VBE(sat) IC

hFE IC

(V)

–10

IC/IB=10

–10

IC/IB=10

1 000

VCE=–10V

(V)

TC=100˚C

CE(sat)

BE(sat)

FE

25˚C

Collector-emitter saturation voltageV

–1

Base-emitter saturation voltage V

–1

TC=–25˚C

Forward current transferratioh

100

–25˚C

100˚C

TC=100˚C

25˚C

25˚C

–25˚C

–0.1

–0.1

10

–0.01

–0.01

1

–0.01

–0.1

–1

–0.01

–0.1

–1

–0.01

–0.1

–1

Collector current

IC (A)

Collector current IC (A)

Collector current

IC (A)

fT IE

Cob VCB

VCER RBE

200

(pF)

50

–100

IC=–10mA

VCB=–10V

IE=0

TC=25˚C

f=200MHz

ob

f=1MHz

(V)

TC=25˚C

TC=25˚C

(MHz)

160

C

40

CER

–80

V

T

Collectoroutput capacitance (Commonbase, input opencircuited)

Transition frequency f

120

30

–60

80

20

–40

40

10

–20

0

0

voltageemitterCollectorbetween(ResistorandE)B

0

1

10

100

–1

–10

–100

0.1

1

10

100

Emitter current IE (mA)

Collector-base voltage VCB (V)

Base-emitter resistance

RBE (kΩ)

2

SJD00002BED